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    2N489 Search Results

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    2N489 Price and Stock

    Central Semiconductor Corp 2N4895-PBFREE

    TRANS NPN 60V TO39
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    Microchip Technology Inc 2N4898

    NPN SILICON TRANSISTOR
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    Microchip Technology Inc 2N4895

    POWER BJT
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    Microchip Technology Inc 2N4896

    POWER BJT
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    Microchip Technology Inc 2N4899

    NPN SILICON TRANSISTOR
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    2N489 Datasheets (235)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N489 Central Semiconductor UNIJUNCTION TRANSISTORS / PROGRAMMABLE UNIJUNCTION TRANSISTORS Scan PDF
    2N489 Central Semiconductor Unijunction Transistors in a TO-5 Case Scan PDF
    2N489 General Electric Semiconductor Data Book 1971 Scan PDF
    2N489 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N489 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N489 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N489 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N489 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N489 Unknown GE Transistor Specifications Scan PDF
    2N489 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N489 Unknown GE Transistor Specifications Scan PDF
    2N489 Semico Unijunction Transistors Scan PDF
    2N489 Semitron Dual / Unijunction Transistors Scan PDF
    2N489 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF
    2N4890 Central Semiconductor Small Signal Transistors Original PDF
    2N4890 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4890 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4890 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4890 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4890 Unknown Vintage Transistor Datasheets Scan PDF
    ...

    2N489 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4895

    Abstract: No abstract text available
    Text: 2N4895 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N4895 O205AD) 1-Aug-02 2N4895

    2N4898X

    Abstract: 2N4899X 2N4900X
    Text: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962)


    Original
    PDF 2N4898X 2N4899X 2N4900X 2N4898X 2N4899X 500mA 250mA 2N4900X

    b0416

    Abstract: TO-202AC
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A


    Original
    PDF 2SA1460 2SA1463 BCX51-10 BCX51-16 ZTX550 TN3468 TN5022 TN3245 2N3245 2SB1044M b0416 TO-202AC

    Untitled

    Abstract: No abstract text available
    Text: 2N4899 Medium-power PNP Silicon Power Transistor. 4 A - 60 V - 25 W. 1 of 1 Home Part Number: 2N4899 Online Store 2N4899 Diodes M edium - po w er PNP Silic o n Po w er Trans is t o r. 4 A - 6 0 V - 2 5


    Original
    PDF 2N4899 com/2n4899 2N4899

    Untitled

    Abstract: No abstract text available
    Text: 2N4895 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N4895 O205AD) 17-Jul-02

    2N2063A

    Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99


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    PDF BC141-S BFW24 BC637 BFS61 2N489S BFX34 2N1890 2N871 BC44S BC44S-18 2N2063A 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola

    Untitled

    Abstract: No abstract text available
    Text: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152


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    PDF A4403SS 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150

    Untitled

    Abstract: No abstract text available
    Text: 2N4896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N4896 O205AD) 17-Jul-02

    0340 TRANSISTOR PNP

    Abstract: No abstract text available
    Text: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962)


    Original
    PDF 2N4898X 2N4899X 2N4900X 2N4900X 2N4899X" 2N4899X-JQR-B 0340 TRANSISTOR PNP

    Untitled

    Abstract: No abstract text available
    Text: 2N4897X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original
    PDF 2N4897X O205AD) 19-Jun-02

    2N4896

    Abstract: No abstract text available
    Text: 2N4896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N4896 O205AD) 19-Jun-02 2N4896

    BC431

    Abstract: LOW-POWER SILICON NPN BC445A bcw9 2NS222
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99


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    PDF BC141-S BFW24 BC637 BFS61 2N489S BFX34 2N1890 2N871 BC44S BC44S-18 BC431 LOW-POWER SILICON NPN BC445A bcw9 2NS222

    2N4891

    Abstract: 2N4893 2N4894 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4
    Text: TYPES 2N4891 THRU 2N4894 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . O L-S 6 8 9 7 7 6 , J A N U A R Y 1967 PLAN AR UNIJUNCTION S IL E C T t TRANSISTORS^ FOR APPLICATIO N IN SCR D R IV E R S , MOTOR-SPEED CONTROLS, TIM ER S, W AVEFORM G EN ERA TO R S, M U LT IV IB R A TO R S , RING CO UN TERS,


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    PDF 2N4891 2N4894 2N4893 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4

    2N4898

    Abstract: 2N4899 2N4900 ib10s
    Text: 2N4898, 2N4899, 2N4900 PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( l c = 100mA, lB = 0 ) Collector Cutoff Current ( VCE = 20 V, lB = 0 )


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    PDF 2N4898, 2N4899, 2N4900 100mA, 2N4898 2N4899 2N4898 2N4899 2N4900 ib10s

    2N6121

    Abstract: 2N6122 2N6124
    Text: TRANSISTORS—POWER PNP TO—66 PACKAGE V CEO !C VOLTS AMPS TYPE h FE @ h FE V CE sat 'c VOLTS AMP MAX PD fT lc T c =25°C MHz NPN AMP w MIN COMPLEMENT @ MIN MAX MIN-MAX 2N4898 40 1 20 - 100 @ .50 0.6 @ 1.0 25 3 2N4910 2N4899 50 1 2 0 - 100 @ .50 0.6 @ 1.0


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    PDF O--66 2N4898 2N4899 2N3740 2N4900 2N3741 2N4910 2N4911 2N4912 O--220 2N6121 2N6122 2N6124

    8130A

    Abstract: 2N4891 2N4900 2N4898 TO-213AA Package 2N4899 s2c-s 1B transistors clare mercury relay RCA-2N4898
    Text: UT 3875081 G E SOLID STATE "D È ~ ÏH ô 7 5 0 a i 0 1E 17377 0017377 D ! '3 3 7 ~ General-Purpose Power Transistors File N u m b e r 1150 Silicon P-N-P * Medium-Power Transistors 2N4898, 2N4899, 2N4900 T ER M IN A L D ESIG N A T IO N S General-Purpose Types for Sw itching A pplications


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    PDF 2N4898, 2N4899, 2N4900 S2CS-2751S O-213AA RCA-2N4898 2N4899and 2N4900 O-213AA 2N4898 8130A 2N4891 TO-213AA Package 2N4899 s2c-s 1B transistors clare mercury relay

    2N4896

    Abstract: 2N4897 2n4895
    Text: r Z 7 SGS-THOMSON 2N4895 ^ 7 # MtOtHKmKMMQS_ 2N4896/2N4897 HIGH CURRENT, FAST SWITCHING APPLICATIONS DESCRIPTIO N The 2N4895, 2N4896 and 2N4897 are silicon epi­ taxial planar NPN transistors in Jedec TO-3 metal case. They are intended for high current, fast switching


    OCR Scan
    PDF 2N4895 2N4896/2N4897 2N4895, 2N4896 2N4897 2N4895-2N489b-^ 2N4895-2N 4896-2N 2n4895

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTORS INC OTE D | fil3bbSG □DDOETl 5 | f 3& Unijunction Transistors WALBERN TYPE “bb INTERBASE RESISTANCE Kil n INTRINSIC STANDOFF RATIO VALLEY CURRENT HIN (MA) 2N489 2N489A 2N489B 4.7-6.8 .51-.62 8 2N490 2N490A 2N490B 2N490C 6.2-9.1 .51-.62


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    PDF 2N489 2N489A 2N489B 2N490 2N490A 2N490B 2N490C 2N491 2H491A 2N491B

    2N62U

    Abstract: No abstract text available
    Text: 8 E ì I m J E L E C T R O N IC S , INC. COLLECTOR CURRENT = D evice No 2N3660 2N3661 2N3740 2N374I 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680 2N62U 2N6212


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    PDF 2N3660 2N3661 2N3740 2N374I 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N62U

    Untitled

    Abstract: No abstract text available
    Text: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049


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    PDF 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954

    2N489

    Abstract: 2N494 2N489A 2N34 TRANSISTOR 2N492 2N491A Germanium power
    Text: Germanium Power Devices Corp Specifications SILICON UNIJUNCTION TRANSISTOR SIÚCON TYPES 2N489.A.B I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ X ” type negative resistance characteristic over a wide tem perature range. A stable peak point


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    PDF

    2NS344

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No SECTION 2 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2NS344 2N5345 2N5679 2N5680 2N6211 2N6212 2N6213 2N6214


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    PDF 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2NS344

    2N3904DCSM

    Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
    Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A


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    PDF GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


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    PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766