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IXZ211N50 Abstract: IXZ2211N50 DSAE0059430 Text: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C	Original	IXZ2211N50 IXZ211N50 dsIXZ2211N50 IXZ2211N50 DSAE0059430	PDF

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MFG & Type

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IXZ211N50

Abstract: IXZ2211N50 DSAE0059430
Text: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C

Original

IXZ2211N50 IXZ211N50 dsIXZ2211N50 IXZ2211N50 DSAE0059430

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