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    IXTP90N055 Search Results

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    IXTP90N055 Price and Stock

    IXYS Corporation IXTP90N055T

    MOSFET N-CH 55V 90A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP90N055T Tube
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    Littelfuse Inc IXTP90N055T2

    MOSFET N-CH 55V 90A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP90N055T2 Tube 300
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    • 1000 $1.2524
    • 10000 $1.2524
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    Newark IXTP90N055T2 Bulk 300
    • 1 -
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    • 100 $1.75
    • 1000 $1.37
    • 10000 $1.23
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    IXYS Corporation IXTP90N055T2

    MOSFETs 90 Amps 55V 0.0084 Rds
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    Mouser Electronics IXTP90N055T2 300
    • 1 $2.66
    • 10 $2.22
    • 100 $1.79
    • 1000 $1.25
    • 10000 $1.23
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    TTI IXTP90N055T2 Tube 300
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    • 1000 $1.2
    • 10000 $1.15
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    TME IXTP90N055T2 297 1
    • 1 $1.87
    • 10 $1.51
    • 100 $1.38
    • 1000 $1.38
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    New Advantage Corporation IXTP90N055T2 8,656 1
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    • 100 $2.51
    • 1000 $2.51
    • 10000 $2.34
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    IXTP90N055 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP90N055T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 90A TO-220 Original PDF
    IXTP90N055T2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 90A TO-220 Original PDF

    IXTP90N055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTA90N055T2

    Abstract: *9956b IXTY90N055T2 IXTY90N055T
    Text: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


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    PDF IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 O-252 O-263 062in. O-220) O-252 O-220 *9956b IXTY90N055T

    IXTP90N055T

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T = = VDSS ID25 55 V 90 A 8.8 m Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF IXTA90N055T IXTP90N055T O-263 90N055T IXTP90N055T

    IXTA90N055T

    Abstract: IXTP90N055T IXTP90n055 90N055 90N055T
    Text: Preliminary Technical Information IXTA90N055T IXTP90N055T TrenchMVTM Power MOSFET = = VDSS ID25 55 V 90 A 8.8 m Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF IXTA90N055T IXTP90N055T O-263 O-220) 90N055T IXTA90N055T IXTP90N055T IXTP90n055 90N055 90N055T

    90N055T2

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


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    PDF IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 O-252 O-263 IXTY90N055T2 90N055T2 02-22-12-B

    90N055

    Abstract: IXTP90n055 IXTA90N055T2 IXTP90N055T2
    Text: TrenchT2TM Power MOSFET IXTA90N055T2 IXTP90N055T2 VDSS ID25 = 55V = 90A Ω ≤ 8.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient


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    PDF IXTA90N055T2 IXTP90N055T2 O-263 O-220 90N055T2 3-06-08-A 90N055 IXTP90n055 IXTA90N055T2 IXTP90N055T2

    IXTP220N04T2

    Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
    Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management


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    PDF O-220 IXTP220N04T2 IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


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    PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    IXAN0068

    Abstract: IXTP220N04T2 IXTP110N055T2 IXTP90n055 IXTA200N055T2 IXTA220N04T2 IXTA70N075T2 IXTA90N055T2 IXTP200N055T2 IXTP70N075T2
    Text: DC to DC Synchronous Converter Design Abdus Sattar, IXYS Corporation IXAN0068 Modern power electronics products require small size and lighter weight of power electronics parts. Filter inductor and capacitor sizes must be small. With the small filter, the switching semiconductor devices must have small switching loss. And heat sink also


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    PDF IXAN0068 210uF 200mV AN-6005, ISL6594D IXAN0068 IXTP220N04T2 IXTP110N055T2 IXTP90n055 IXTA200N055T2 IXTA220N04T2 IXTA70N075T2 IXTA90N055T2 IXTP200N055T2 IXTP70N075T2