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IXYS Corporation IXTM24N50L POWER MOSFET TO-3
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IXTM24N50 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTM24N50		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXTM24N50		IXYS	MegaMOS Power MOSFETs		Scan	PDF
IXTM24N50		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

IXTM24N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
23-12 Abstract: IXTM24N50 SHD239605 Text: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 500 24 18 300 0.23 @ 12 0.27 IXTM24N50	Original	PDF	IXTM24N50 SHD239605 23-12 IXTM24N50 SHD239605
21N50 Abstract: 24N50 ixys ixth 21N50 IXTM21N50 Text: VDSS MegaMOSTMFET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V VGSM	Original	PDF	IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 O-204 21N50 24N50 ixys ixth 21N50 IXTM21N50
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
SHD239608 Abstract: shd239606 Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM	Original	PDF	O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606
IXFM50N20 Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413 Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60	Original	PDF	SHD218413 SHD2181 SHD2182 SHD2183 SHD2184 SHD2185 SHD2186 SHD2187 SHD2188 SHD218413A IXFM50N20 IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
Untitled Abstract: No abstract text available Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500	OCR Scan	PDF	IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b
IXTH24N45 Abstract: No abstract text available Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	PDF	0D003S5 IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 O-204 O-247 IXTH24N50, IXTM24N50,
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	PDF	O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	PDF	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
*2393n Abstract: D2199 IRF9140 2184b d2186 2188a d2188 Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC	OCR Scan	PDF	SHD2261 SHD2262 SHD2263 SHD2264 SHD2265 SHD2266 SHD2268 IRFY044 *2393n D2199 IRF9140 2184b d2186 2188a d2188