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    IXTH20N50D Search Results

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    IXTH20N50D Price and Stock

    IXYS Corporation IXTH20N50D

    MOSFET N-CH 500V 20A TO247
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    DigiKey IXTH20N50D Tube 300
    • 1 -
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    • 1000 $27.1875
    • 10000 $27.1875
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    Mouser Electronics IXTH20N50D
    • 1 -
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    • 1000 $17.7
    • 10000 $17.7
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    New Advantage Corporation IXTH20N50D 29 1
    • 1 $21.18
    • 10 $21.18
    • 100 $21.18
    • 1000 $21.18
    • 10000 $21.18
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    IXYS Integrated Circuits Division IXTH20N50D

    MOSFET DIS.20A 500V N-CH TO247-3 H.VOLTAGE THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH20N50D
    • 1 $9.54338
    • 10 $9.54338
    • 100 $8.6758
    • 1000 $8.6758
    • 10000 $8.6758
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    IXTH20N50D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH20N50D IXYS High Voltage MOSFET N-Channel, Depletion Mode Original PDF

    IXTH20N50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3551S

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 N-Channel, Depletion Mode = = ≤ RDS on 500V 20A 330mΩ Ω TO-268 G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTH20N50D IXTT20N50D O-268 O-247 O-268 O-247) Condit00 3551S

    IXTT20N50D

    Abstract: IXTH20N50D 20n50 20N50D siemens relay rg
    Text: IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 = = ≤ RDS on N-Channel, Depletion Mode 500V 20A Ω 330mΩ TO-268 (IXTT) G D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±30


    Original
    PDF IXTH20N50D IXTT20N50D O-268 O-247) O-247 100ms IXTT20N50D IXTH20N50D 20n50 20N50D siemens relay rg

    Untitled

    Abstract: No abstract text available
    Text: VDSX ID25 IXTH20N50D IXTT20N50D High Voltage MOSFET = = ≤ RDS on N-Channel, Depletion Mode 500V 20A Ω 330mΩ TO-268 (IXTT) G D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±30


    Original
    PDF IXTH20N50D IXTT20N50D O-268 O-247) 100ms 20N50D

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


    Original
    PDF IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D