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    IXTA3N100P Search Results

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    IXTA3N100P Price and Stock

    Littelfuse Inc IXTA3N100P

    MOSFET N-CH 1000V 3A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA3N100P Tube 300
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    • 1000 $2.24023
    • 10000 $2.24023
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    Newark IXTA3N100P Bulk 300
    • 1 -
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    • 100 $3.13
    • 1000 $2.52
    • 10000 $2.34
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    Littelfuse Inc IXTA3N100P-TRL

    MOSFET N-CH 1000V 3A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA3N100P-TRL Reel 800
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    • 1000 $2.19613
    • 10000 $2.19613
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    Newark IXTA3N100P-TRL Reel 800
    • 1 $2.9
    • 10 $2.9
    • 100 $2.9
    • 1000 $2.9
    • 10000 $2.39
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    IXYS Corporation IXTA3N100P

    MOSFETs 3 Amps 1000V 4.8 Rds
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    Mouser Electronics IXTA3N100P
    • 1 $4.71
    • 10 $3.95
    • 100 $3.05
    • 1000 $2.46
    • 10000 $2.46
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    Future Electronics IXTA3N100P Tube 300
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    • 100 $2.2
    • 1000 $2.2
    • 10000 $2.2
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    TTI IXTA3N100P Tube 300
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    • 1000 $2.28
    • 10000 $2.2
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    TME IXTA3N100P 1
    • 1 $3.75
    • 10 $2.98
    • 100 $2.68
    • 1000 $2.68
    • 10000 $2.68
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    IXYS Corporation IXTA3N100P-TRL

    MOSFETs IXTA3N100P TRL
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    Mouser Electronics IXTA3N100P-TRL
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    • 1000 $2.45
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    TTI IXTA3N100P-TRL Reel 800
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    • 1000 $2.43
    • 10000 $2.31
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    IXYS Integrated Circuits Division IXTA3N100P

    MOSFET DIS.3A 1000V N-CH TO263(D2PAK) POLAR SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTA3N100P
    • 1 $4.18583
    • 10 $4.18583
    • 100 $3.8053
    • 1000 $3.8053
    • 10000 $3.8053
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    IXTA3N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA3N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-263 Original PDF

    IXTA3N100P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTP3N100P

    Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100
    Text: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100 PDF

    IXTH3N100P

    Abstract: IXTA3N100P
    Text: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original
    IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P PDF

    T3N100

    Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
    Text: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 PDF