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    IXYS Corporation IXGQ50N60C4D1

    IGBT 600V 90A 300W TO3P
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    IXGQ50N60C4D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGQ50N60C4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO3P Original PDF

    IXGQ50N60C4D1 Datasheets Context Search

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    IF110

    Abstract: IXGQ50N60C4D1 tc9050 IGBT 15A TO-3P
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGQ50N60C4D1 VCES IC90 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 50A 2.50V 40ns TO-3P Maximum Ratings G C E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGQ50N60C4D1 IF110 25subjective 338B2 IF110 IXGQ50N60C4D1 tc9050 IGBT 15A TO-3P

    IXGH50N60C4D1

    Abstract: IXGQ50N60C4D1 G50N60 g50n
    Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V


    Original     		PDF IXGQ50N60C4D1 IXGH50N60C4D1 IC110 IC110 IF110 O-247 IXGH50N60C4D1 G50N60 g50n

    Untitled

    Abstract: No abstract text available
    Text: High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V


    Original     		PDF IC110 IXGQ50N60C4D1 IXGH50N60C4D1 IF110 O-247

    G50N60

    Abstract: IXGH50N60C4D1 IXGQ50N60C4D1
    Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V


    Original     		PDF IXGQ50N60C4D1 IXGH50N60C4D1 IC110 IC110 IF110 O-247 G50N60 IXGH50N60C4D1