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    g50n60

    Abstract: No abstract text available
    Text: High-Gain IGBTs w/Diode IXGH50N60B4D1 IXGQ50N60B4D1 VCES = 600V IC110 = 36A VCE sat ≤ 1.80V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous


    Original     		IXGH50N60B4D1 IXGQ50N60B4D1 IC110 O-247 IC110 IF110 g50n60 PDF

    IXGQ50N60B4D1

    Abstract: IXGH50N60B4D1 G50N60
    Text: High-Gain IGBTs w/Diode IXGH50N60B4D1 IXGQ50N60B4D1 VCES = 600V IC110 = 50A VCE sat ≤ 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		IXGH50N60B4D1 IXGQ50N60B4D1 IC110 O-247 IC110 IF110 IXGQ50N60B4D1 G50N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Gain IGBTs w/Diode VCES = 600V IC110 = 50A VCE sat ≤ 1.8V IXGH50N60B4D1 IXGQ50N60B4D1 Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		IC110 IXGH50N60B4D1 IXGQ50N60B4D1 O-247 IF110 PDF