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    IXGH30N60AU1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH30N60AU1 IXYS High Speed IGBT with Diode Scan PDF

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    Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		PDF IXGH30N60AU1 Junc-Case620m delay100nà time200nà time500nÃ