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    IXGH28N60B3D1 Price and Stock

    IXYS Corporation IXGH28N60B3D1

    IGBT 600V 66A 190W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH28N60B3D1 Tube 278 1
    • 1 $7.39
    • 10 $7.39
    • 100 $4.56133
    • 1000 $3.76425
    • 10000 $3.76425
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    Mouser Electronics IXGH28N60B3D1 193
    • 1 $6.42
    • 10 $5.52
    • 100 $4.16
    • 1000 $3.76
    • 10000 $3.76
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    Future Electronics IXGH28N60B3D1 Tube 27 Weeks 300
    • 1 -
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    • 100 $4.95
    • 1000 $4.95
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    TTI IXGH28N60B3D1 Tube 300
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    • 100 -
    • 1000 $5.12
    • 10000 $5.12
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    TME IXGH28N60B3D1 1
    • 1 $7.28
    • 10 $5.79
    • 100 $5.2
    • 1000 $5.2
    • 10000 $5.2
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    Littelfuse Inc IXGH28N60B3D1

    Disc Igbt Pt-Mid Frequency To-247Ad/ Tube |Littelfuse IXGH28N60B3D1
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    Newark IXGH28N60B3D1 Bulk 300
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    • 1000 $3.95
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    IXYS Integrated Circuits Division IXGH28N60B3D1

    IGBT DIS.DIODE SINGLE 28A 600V POLARHV TO247
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    Ozdisan Elektronik IXGH28N60B3D1
    • 1 $6.74608
    • 10 $6.74608
    • 100 $6.1328
    • 1000 $6.1328
    • 10000 $6.1328
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    IXGH28N60B3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH28N60B3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 66A 190W TO247AD Original PDF

    IXGH28N60B3D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM IGBT IXGH28N60B3D1 VCES = 600V IC110 = 28A VCE sat ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM


    Original     		PDF IXGH28N60B3D1 IC110 O-247 338B2

    IXGH28N60B3D1

    Abstract: IXGH28N60B3 IF110 p3nc
    Text: Advance Technical Information IXGH28N60B3D1 PolarHVTM IGBT VCES = 600V = 28A IC110 VCE sat ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM


    Original     		PDF IXGH28N60B3D1 IC110 O-247 338B2 IXGH28N60B3D1 IXGH28N60B3 IF110 p3nc

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250