IXBF 40N160 Search Results

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IXYS Corporation IXBF40N160 IGBT 1600V 28A ISOPLUSI4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBF40N160	Tube			25	1 - 10 - 100 $22.8076 1000 $22.8076 10000 $22.8076	Buy Now
Mouser Electronics	IXBF40N160					1 $27.51 10 $24.45 100 $19.55 1000 $19.55 10000 $19.55	Get Quote
TME	IXBF40N160				1	1 $24.08 10 $20.08 100 $19.55 1000 $19.55 10000 $19.55	Get Quote
Littelfuse Inc IXBF40N160 Disc Igbt Bimosfet-High Volt I4-Pac/Tube \|Littelfuse IXBF40N160
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBF40N160	Bulk			25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Integrated Circuits Division IXBF40N160 IGBT DIS.SINGLE 16A 1600V BIMOSFET ISOPLUS i4-PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXBF40N160					1 $56.36835 10 $56.36835 100 $52.6807 1000 $52.6807 10000 $52.6807	Get Quote

IXBF 40N160 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBF 40N160		IXYS	TRANS IGBT CHIP N-CH 1600V 28A 3ISOPLUS I4-PAC		Original	PDF
IXBF40N160		IXYS	Discrete IGBTs		Original	PDF

IXBF 40N160 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
40N160 Abstract: 40N140 Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 28 A 1400/1600 V 6.2 V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	40N140 40N160 40N140 40N160 IXBF40
40N160 Abstract: IXBF 40N140 IXBF 40N160 40N140 Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	40N140 40N160 40N140 40N160 IXBF40 IXBF 40N140 IXBF 40N160
40N14 Abstract: No abstract text available Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	40N140 40N160 40N160 40N14
40N160 Abstract: 40N140 Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	40N160 vol600 IXBF40 40N160 40N140
Untitled Abstract: No abstract text available Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	40N160 IXBF40
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	PDF	16N170A 16N170 42N170 40N160 9N160 15N140
IXAN0014 Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements Text: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast	Original	PDF	IXAN0014 D-68623 IXAN0014 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q