50n60b
Abstract: 50n60 50N6 IXGH50N60B
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
O-247AD
728B1
50n60b
50n60
50N6
IXGH50N60B
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Untitled
Abstract: No abstract text available
Text: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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50N60B
O-247
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IXGK50N60A2D1
Abstract: No abstract text available
Text: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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IXGK50N60A2D1
50N60A2D1
IC110
IF110
50N60B2D1
O-264
PLUS247
405B2
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IXGR50N60B2D1
Abstract: 50N60B2
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings
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ISOPLUS247TM
50N60B2
50N60B2D1
IC110
IF110
50N60B2D1
ISOPLUS247
2x61-06A
065B1
728B1
IXGR50N60B2D1
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50N60B2
Abstract: 50n60
Text: HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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50N60B2
IC110
O-247
O-268
50N60B2
50n60
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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50N60B
120ns
OT-227B
E153432
728B1
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Untitled
Abstract: No abstract text available
Text: Ultrasonic sensors UZAM 50N6121/S14 Ultrasonic proximity sensors dimension drawing 58,5 70 SW 36 95 14,2 ø 44,5 M30 x 1,5 LED 11 Teach-in M12 x 1 general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde
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50N6121/S14
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Untitled
Abstract: No abstract text available
Text: Ultrasonic sensors UZAM 50N6121 Ultrasonic proximity sensors dimension drawing 95 70 SW 36 58,5 14,2 ø 44,5 M30 x 1,5 Teach- in LED general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde 350 . 2500 mm
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50N6121
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50n60
Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623
Text: Advanced Technical Information IGBT with Reverse Blocking capability VCES = 600 / 800V IC25 = 60 A VCE sat = 2.5 V tf = 75 ns IXRH 50N80 IXRH 50N60 C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol Conditions
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50N80
50N60
O-247
50n60
G 50N60
50n80
bi-directional switches IGBT
induction heat resonant
TO-247
D-68623
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50N60BD1
Abstract: 60-06A PLUS247 IXGK50N60BD1
Text: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75
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50N60BD1
PLUS247
0-06A
50N60BD1
60-06A
PLUS247
IXGK50N60BD1
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IGBT W 20 NK 50 Z
Abstract: 50N60B IXSH50N60B
Text: IGBT High Speed IXSH 50N60B V`bp I`OR V`bEë~íF Maximum Ratings TO-247 AD Short Circuit SOA Capability = 600 V = 75 A = 2.5 V mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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50N60B
O-247
IGBT W 20 NK 50 Z
50N60B
IXSH50N60B
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50N60C2
Abstract: 50n60 IXGH50N60C2
Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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50N60C2
IC110
O-247
O-268
50N60C2
50n60
IXGH50N60C2
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50n60
Abstract: ixsk50n60au1 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60AU1
O-264
50n60
ixsk50n60au1
50N60AU1
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BD3 diode
Abstract: 50N60BD2 w a2a
Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75
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50N60BD2
50N60BD3
Applic100
BD3 diode
w a2a
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50N60A
Abstract: IXGH50N60A
Text: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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50N60A
50N60A
IXGH50N60A
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Untitled
Abstract: No abstract text available
Text: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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50N60BD1
O-264
PLUS247
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50N6
Abstract: xs 004 a
Text: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600
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50N60BD3
OT-227B,
50N6
xs 004 a
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Untitled
Abstract: No abstract text available
Text: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
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Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient
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50N60BU1
50N60BU1
to150
PLUS247TM
O-264AA
IXSX50N60BU1
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50N60A
Abstract: IXGH50N60AS IXGH50N60A
Text: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600
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50N60A
50N60AS
O-247
D94006DE,
IXGH50N60AS
IXGH50N60A
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50N60
Abstract: G 50N60 IXGH50N50B
Text: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n
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50N50B
50N60B
50N50
50N60
O-247
G 50N60
IXGH50N50B
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IXGH50N60A
Abstract: 100-200Q IXGH50N60AS
Text: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous
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50N60A
50N60AS
O-247
50N60A)
B2-91
IXGH50N60A
100-200Q
IXGH50N60AS
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings
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50N60AU1
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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50N60AU1
O-264
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