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Catalog Datasheet	MFG & Type	PDF	Document Tags
HK-12S120-1010 Abstract: tn8d51a 4 FB TN8D51 IT1326 Text: TN8D51A 注文コード No. N A 0 9 8 5 三洋半導体データシート N TN8D51A Excellent-Performance Power & RF Device 他励型降圧スイッチングレギュレータ 12V 出力特長・高効率(オン抵抗 80mΩ, 縦型 P-ch パワ− MOSFET)。	Original	PDF	TN8D51A 90308IQ TC-00001590 A0985-1/10 IT12701 IT12702 A0985-8/10 HK-12S120-1010 tn8d51a 4 FB TN8D51 IT1326
Untitled Abstract: No abstract text available Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).	Original	PDF	TN8D51A ENA0985 A0985-11/11
tn8d51a Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326 Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).	Original	PDF	TN8D51A ENA0985 A0985-11/11 tn8d51a HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
a1044 Abstract: A1044-1 A10441 Text: SCH2311 Ordering number : ENA1044 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2311 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	PDF	SCH2311 ENA1044 PW10s, 900mm20 A1044-4/4 a1044 A1044-1 A10441
Untitled Abstract: No abstract text available Text: MCH6655 Ordering number : ENA1043 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6655 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	PDF	MCH6655 ENA1043 PW10s, 900mm20 A1043-4/4
A1039 Abstract: A10391 6hp04 6HP04CH A10393 Text: 6HP04CH Ordering number : ENA1039 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage	Original	PDF	6HP04CH ENA1039 PW10s, 900mm20 A1039-4/4 A1039 A10391 6hp04 6HP04CH A10393
it1327 Abstract: A1044 A1044-1 A10441 Text: SCH2311 注文コード No. N A 1 0 4 4 三洋半導体データシート N SCH2311 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・4V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	PDF	SCH2311 900mm2 --30V --120mA IT10873 900mm2 IT13272 it1327 A1044 A1044-1 A10441
A1043 Abstract: No abstract text available Text: MCH6655 注文コード No. N A 1 0 4 3 三洋半導体データシート N MCH6655 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・4V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	PDF	MCH6655 900mm2 --30V --120mA IT10873 900mm2 IT13271 A1043