IRL6903
Abstract: No abstract text available
Text: PD - 9.1538B IRL6903 HEXFET Power MOSFET Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -30V RDS on = 0.011Ω G ID = -105A
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1538B
IRL6903
-105A
O-220
IRL6903
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IRL6903
Abstract: F53 DIODE IRL6903L IRL6903S
Text: PD - 9.1640A IRL6903S/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL6903S l Low-profile through-hole (IRL6903L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET
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IRL6903S/L
IRL6903S)
IRL6903L)
IRL6903
F53 DIODE
IRL6903L
IRL6903S
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IRF3205 equivalent
Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test
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O-220/D2PAK
IRF9630
IRF9510L
IRF9520
IRF9510
IRF9Z14
IRF9Z34
IRCZ34
IRCZ44
IRC540
IRF3205 equivalent
IRF 9732
IRFz44n equivalent
IRF3710 equivalent
IRF4905 equivalent
IRC540 equivalent
irf 9450
IRF 9734
IRF5305 equivalent
irf 9740
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IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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Untitled
Abstract: No abstract text available
Text: PD - 9.1640B International IÖR Rectifier IRL6903S/L • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
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IRL6903S)
IRL6903L)
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A
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IRL6903S
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 5 3 8 B International l R Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description
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IRL6903
-105AÂ
485S4S2
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L415
Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
Text: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching
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1640B
IRL6903S/L
IRL6903S)
IRL6903L)
L415
30V 10.5A p-channel MOSFET
25i5
diode sv 03
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IRF1010I
Abstract: 1538B
Text: PD - 9 .1538B International IÖR Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description
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