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    IRG7PSH Price and Stock

    Infineon Technologies AG IRG7PSH50UDPBF

    IGBT TRENCH 1200V 116A TO274
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    Rochester Electronics LLC IRG7PSH50UDPBF

    IRG7PSH50 - DISCRETE IGBT WITH A
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    DigiKey IRG7PSH50UDPBF Bulk 36
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    Infineon Technologies AG IRG7PSH73K10PBF

    IGBT TRENCH 1200V 220A SUPER247
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    Rochester Electronics LLC IRG7PSH54K10DPBF

    IGBT, 120A I(C), 1200V V(BR)CES,
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    DigiKey IRG7PSH54K10DPBF Bulk 32
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    Infineon Technologies AG IRG7PSH54K10DPBF

    IGBT 1200V 120A 520W TO274AA
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    IRG7PSH Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PSH50UDPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 116A 462W TO274 Original PDF
    IRG7PSH54K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 120A 520W TO274AA Original PDF
    IRG7PSH73K10PBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 220A 1150W SUPER247 Original PDF

    IRG7PSH Datasheets Context Search

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    IRG7PSH

    Abstract: 1200V IRG7PSH50UDPBF 719C
    Text: PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PSH50UDPbF Super-247 IRFPS37N50A Super-247 IRG7PSH 1200V IRG7PSH50UDPBF 719C

    Untitled

    Abstract: No abstract text available
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PSH50UDPbF IRFPS37N50A Super-247

    Untitled

    Abstract: No abstract text available
    Text: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS


    Original     		PDF IRG7PSH54K10DPbF IRG7PSH54K10DPbFÂ Super-247 JESD47F)

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 SUPER-247
    Text: PD - 97406 IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF IRG7PSH73K10PbF Super-247 IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73