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    IRG7PH50 Price and Stock

    Infineon Technologies AG IRG7PH50U-EP

    IGBT 1200V ULTRA FAST TO247
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    DigiKey IRG7PH50U-EP Tube
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    Infineon Technologies AG IRG7PH50UPBF

    IGBT 1200V 140A 556W TO247AC
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    Infineon Technologies AG IRG7PH50K10DPBF

    IGBT 1200V 90A 400W TO247AC
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    Rochester Electronics LLC IRG7PH50K10DPBF

    IGBT 1200V 90A TO247AC
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    DigiKey IRG7PH50K10DPBF Bulk 47
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    Infineon Technologies AG IRG7PH50K10D-EPBF

    IGBT 1200V 90A 400W TO247AD
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    Find more IRG7PH50 price and stock on Findchips.com

    IRG7PH50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH50K10D-EPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AD Original PDF
    IRG7PH50K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AC Original PDF
    IRG7PH50U-EP Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST TO247 Original PDF
    IRG7PH50UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 140A 556W TO247AC Original PDF

    IRG7PH50 Datasheets Context Search

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    irg7ph50

    Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications


    Original     		PDF IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive


    Original     		PDF IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F)

    irg7ph50

    Abstract: No abstract text available
    Text: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50

    irg7ph50

    Abstract: IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud
    Text: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud

    Untitled

    Abstract: No abstract text available
    Text: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS


    Original     		PDF IRG7PSH54K10DPbF IRG7PSH54K10DPbFÂ Super-247 JESD47F)