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Infineon Technologies AG IRG7CH35UED IGBT 1200V ULTRA FAST DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7CH35UED	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRG7CH73K10EF IGBT 1200V ULTRA FAST DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7CH73K10EF	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRG7CH73K10EF-R IGBT 1200V ULTRA FAST DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7CH73K10EF-R	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRG7CH37K10EF Trans IGBT Chip N-CH 1200V 15A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH37K10EF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRG7CH37K10EF	Waffle Pack			2,290	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IRG7CH30K10EF Trans IGBT Chip N-CH 1200V 10A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH30K10EF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRG7CH30K10EF	Waffle Pack			3,708	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IRG7CH Datasheets (14)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG7CH28UEF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH30K10EF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER		Original	PDF
IRG7CH35UEF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH37K10EF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER		Original	PDF
IRG7CH42UEF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH44K10EF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER		Original	PDF
IRG7CH50K10EF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER		Original	PDF
IRG7CH54K10EF-R		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH73K10EF		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH73K10EF-R		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH73UEF-R		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH75K10EF-R		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH75UEF-R		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF
IRG7CH81K10EF-R		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF

IRG7CH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 96271 IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	IRG7CH54K10B
Untitled Abstract: No abstract text available Text: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution	Original	PDF	IRG7CH73K10B-R
IRG7CH44K10B Abstract: IRG7CH44 Text: PD - 96270A IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	6270A IRG7CH44K10B IRG7CH44K10B IRG7CH44
IRG7CH50 Abstract: Inverters el tape IRG7CH50UB Text: PD - 97628 IRG7CH50UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	PDF	IRG7CH50UB IRG7CH50 Inverters el tape IRG7CH50UB
Untitled Abstract: No abstract text available Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features	Original	PDF	IRG7CH37K10EF
IRG7CH81K10B Abstract: IRG7CH81K Text: PD - 97423 IRG7CH81K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	IRG7CH81K10B IRG7CH81K10B IRG7CH81K
irg7ph35 Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	PDF	IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
Untitled Abstract: No abstract text available Text: PD - 97430 IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	IRG7CH73K10B 1200e
Untitled Abstract: No abstract text available Text: PD - 97664A IRG7CH37K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	7664A IRG7CH37K10B
Untitled Abstract: No abstract text available Text: PD - 96272 IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	IRG7CH75K10B
IRG7CH54K10B Abstract: IRG7CH54 Text: PD - 96271A IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	6271A IRG7CH54K10B IRG7CH54K10B IRG7CH54
IRG7CH75K10B Abstract: IRG7CH MIL-HDBK-263 Text: PD - 96272A IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	6272A IRG7CH75K10B IRG7CH75K10B IRG7CH MIL-HDBK-263
IRG7CH73K10 Abstract: IRG7CH73K10B MIL-HDBK-263 Text: PD - 97430A IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	7430A IRG7CH73K10B IRG7CH73K10 IRG7CH73K10B MIL-HDBK-263
Untitled Abstract: No abstract text available Text: PD - 96270 IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	IRG7CH44K10B

for IR IGBT die Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient	Original	PDF	7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH