IRFR3209A Search Results

IRFR3209A Price and Stock

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HARTING Technology Group IRFR3209A 3.1A, 400V, 1.800 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRFR3209A		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFR3209A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFR3209A		Fairchild Semiconductor	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs		Original	PDF
IRFR3209A		Fairchild Semiconductor	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFET		Original	PDF
IRFR3209A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

IRFR3209A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ifu320 Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
ifu320 Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404 Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
ifr320 Abstract: ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRFR320, IRFU320 TA17404. ifr320 ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334
IFU320 Abstract: ifr320 fu320 Text: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	PDF	IRFR320, FU320 IRFU320 IFU320 ifr320 fu320
Untitled Abstract: No abstract text available Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,