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Vishay Siliconix IRFI630GPBF MOSFET N-CH 200V 5.9A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI630GPBF	Tube	1,615		1	1 $3.57 10 $3.57 100 $3.57 1000 $1.23287 10000 $1.16271	Buy Now
Vishay Siliconix IRFI630G MOSFET N-CH 200V 5.9A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI630G	Tube			1,000	1 - 10 - 100 - 1000 $2.9625 10000 $2.9625	Buy Now
Bristol Electronics	IRFI630G		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFI630G		320			1 $7.44 10 $7.44 100 $4.588 1000 $4.092 10000 $4.092	Buy Now
Rochester Electronics LLC IRFI630BTU N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI630BTU	Bulk			1,211	1 - 10 - 100 - 1000 - 10000 $0.25	Buy Now
Vishay Intertechnologies IRFI630GPBF MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRFI630GPBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFI630GPBF	Reel		13 Weeks	1,000	1 - 10 - 100 - 1000 $1.24875 10000 $1.17529	Buy Now
Mouser Electronics	IRFI630GPBF		1,037			1 $2.41 10 $1.51 100 $1.39 1000 $1.17 10000 $1.17	Buy Now
Verical	IRFI630GPBF		1,495		13	1 - 10 - 100 $1.3567 1000 $1.1492 10000 $1.1054	Buy Now
Arrow Electronics	IRFI630GPBF		1,500	13 Weeks	1	1 $1.4852 10 $1.4852 100 $1.3528 1000 $1.1459 10000 $1.1023	Buy Now
TTI	IRFI630GPBF	Tube	500		50	1 - 10 - 100 $1.35 1000 $1.16 10000 $1.16	Buy Now

TME	IRFI630GPBF		795		1	1 $2.65 10 $2.65 100 $0.85 1000 $0.74 10000 $0.74	Buy Now
ComSIT USA	IRFI630GPBF		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IRFI630GPBF			14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRFI630GPBF		500		1	1 - 10 - 100 $0.7 1000 $0.65 10000 $0.65	Buy Now
International Rectifier IRFI630 TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6.3A I(D),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFI630		100			1 $1.875 10 $1.875 100 $1.125 1000 $1.125 10000 $1.125	Buy Now

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IRFI630 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFI630	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF
IRFI630	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)	Scan	PDF
IRFI630	International Rectifier	FullPak - Fully Isolated HEXFET	Scan	PDF
IRFI630A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFI630A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI630A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFI630B	Fairchild Semiconductor	200 V N-Channel MOSFET	Original	PDF
IRFI630B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF
IRFI630BTU	Fairchild Semiconductor	200V N-Channel B-FET / Substitute of IRFI630A	Original	PDF
IRFI630BTU_FP001	Fairchild Semiconductor	200V N-Channel B-FET / Substitute of IRFI630A	Original	PDF
IRFI630G	International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Original	PDF
IRFI630G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI630G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.9A TO220FP	Original	PDF
IRFI630G	International Rectifier	HEXFET Power MOSFET	Scan	PDF

IRFI630G	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)	Scan	PDF
IRFI630G	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFI630G	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, Power, 200V, 5.9A, Pkg Style Fully Isolated TO-220 Fullpak	Scan	PDF
IRFI630G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFI630G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFI630GPBF	International Rectifier	100V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPAK package	Original	PDF

IRFI630 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI630G, SiHFI630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI630G, SiHFI630G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI630G, SiHFI630G O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFI630 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)6.3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)25 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)32 Minimum Operating Temp (øC)	Original	PDF	IRFI630
IRFI630G Abstract: SiHFI630G SiHFI630G-E3 Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI630G, SiHFI630G O-220 11-Mar-11 IRFI630G SiHFI630G-E3
AN609 Abstract: IRFI630G SiHFI630G Text: IRFI630G_RC, SiHFI630G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFI630G SiHFI630G AN609, 06-May-10 AN609
Untitled Abstract: No abstract text available Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFW630B IRFI630B O-262 I630B IRFI630B IRFI630BTU FP001
Untitled Abstract: No abstract text available Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFW630B IRFI630B
IRFI630B Abstract: IRFW630B Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFW630B IRFI630B IRFI630B
Untitled Abstract: No abstract text available Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI630G, SiHFI630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: PD - 94846 IRFI630GPbF • Lead-Free 11/14/03 Document Number: 91148 www.vishay.com 1 IRFI630GPbF Document Number: 91148 www.vishay.com 2 IRFI630GPbF Document Number: 91148 www.vishay.com 3 IRFI630GPbF Document Number: 91148 www.vishay.com 4 IRFI630GPbF Document Number: 91148	Original	PDF	IRFI630GPbF O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: PD - 94846 IRFI630GPbF • Lead-Free 11/14/03 Document Number: 91148 www.vishay.com 1 IRFI630GPbF Document Number: 91148 www.vishay.com 2 IRFI630GPbF Document Number: 91148 www.vishay.com 3 IRFI630GPbF Document Number: 91148 www.vishay.com 4 IRFI630GPbF Document Number: 91148	Original	PDF	IRFI630GPbF O-220 08-Mar-07
IRFI630B Abstract: IRFW630B Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFW630B IRFI630B IRFI630B
N-Channel 40V MOSFET Abstract: 125 diode IRFW630B N-Channel MOSFET 200v IRFI630B Text: IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFW630B IRFI630B N-Channel 40V MOSFET 125 diode N-Channel MOSFET 200v IRFI630B

IRFI630G Abstract: SiHFI630G SiHFI630G-E3 Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI630G, SiHFI630G O-220 18-Jul-08 IRFI630G SiHFI630G-E3
W630B Abstract: No abstract text available Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFW630B IRFI630B O-263 W630B IRFW630BTM FP001 W630B
94846 Abstract: No abstract text available Text: PD - 94846 IRFI630GPbF • Lead-Free www.irf.com 1 11/14/03 IRFI630GPbF 2 www.irf.com IRFI630GPbF www.irf.com 3 IRFI630GPbF 4 www.irf.com IRFI630GPbF www.irf.com 5 IRFI630GPbF 6 www.irf.com IRFI630GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	PDF	IRFI630GPbF O-220 94846
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
IRGKI165F06 Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)	Original	PDF	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
IRFI630G Abstract: 59-A Text: PD-9.652A International S Rectifier IRFI630G HEXFET P ow er M O S FE T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D 111 Vdss = 200V \ G \ R DS on =	OCR Scan	PDF	IRFI630G O-220 IRFI630G 59-A
IRF1630 Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A Text: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A	OCR Scan	PDF	IRFI630G RF1630G IRF1630 irf1630g IRF163 1RF16 59-A 9652A
Untitled Abstract: No abstract text available Text: International iQR R ectifier HEXFET P o w e r M O S F E T • • • • • 465545E DD151E4 =136 * I N R PD-9.652A IRFI630G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist - 4.8mm	OCR Scan	PDF	465545E DD151E4 IRFI630G O-220
irf1740 Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040	OCR Scan	PDF	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

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IRFI630 Datasheets (21)

IRFI630 Datasheets Context Search

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IRFI630G

AN609

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IRFI630B

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IRFI630B

N-Channel 40V MOSFET

IRFI630G

W630B

94846

fqp60n06

IRGKI165F06

BC548 TRANSISTOR REPLACEMENT

IRFI630G

IRF1630

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irf1740