IRFC224 Search Results

IRFC224 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFC224R		International Rectifier	IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die		Scan	PDF

IRFC224 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IR2151 Abstract: IR51HD224 zener diode 20w Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation	Original	PDF	IR51HD224 IR2151 IR51HD224 zener diode 20w
half-bridge Abstract: high speed bridge rectifier IR2151 IR51HD224 mosfet Vcc 250v Text: Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package	Original	PDF	IR51HD224 IR51HD224 half-bridge high speed bridge rectifier IR2151 mosfet Vcc 250v
cmos 555 timer Abstract: IR2151 IR51H224 Text: Data Sheet No. PD-6.059D IR51H224 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs	Original	PDF	IR51H224 IR51H224 cmos 555 timer IR2151
IR2151 Abstract: IR51H224 Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51H224 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation	Original	PDF	IR51H224 IR51H224 IR2151
IRFZ44 equivalent Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30 Text: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214	OCR Scan	PDF	IRFC014 IRFC110 IRFC210 IRFC214 IRFC310 IRFC024 IRFC120 IRFC220 IRFC224 IRFC320 IRFZ44 equivalent IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
1RF640 Abstract: 1RFZ44 1RFBE30 equivalent irf840 IRFBg30 equivalent irf540 equivalent IRFC214 IRF51 1RFZ14 1RFC430 Text: HEXFET* Power MOSFETs International Z p S IÖR Rectifier *-:f4 « t -'ÏM .i ! ¿A,' «V ' HEX Siie Part Number Recommended Source Bonding Wire ^DS on Die Outline Figure mils mm V ds Equivalent Device Type HEXFET Die N-Channel 4 .1 IRFC048 60 4 IRFCE40	OCR Scan	PDF	IRFC048 IRFCE40 1RFC430 1RFCC30 IRFCE30 IRFCF30 1RFC234 1RFC044 IRFC230 IRFC240 1RF640 1RFZ44 1RFBE30 equivalent irf840 IRFBg30 equivalent irf540 equivalent IRFC214 IRF51 1RFZ14
IRF1644 Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003 Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.	OCR Scan	PDF	100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
IRF540 n-channel MOSFET Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.	OCR Scan	PDF	QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
irf*234 n Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10 Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5	OCR Scan	PDF	4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
IRFZ44 equivalent Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf234 n IRFCG50 IRFC034 Text: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450	OCR Scan	PDF	IRFK4H054 IRFK4H150 IRFK4H250 IRFK4H350 IRFK4H450 IRFK4HC50 IRFK4HE50 IRFK4J054 IRFK4J150 IRFK4J250 IRFZ44 equivalent IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
IRFBE40 Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034 Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800	OCR Scan	PDF	IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 IRFK3D150 IRFK3D250 IRFK3D350 IRFBE40 IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
FL110 Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case	OCR Scan	PDF	OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
HEXFET III - A new Generation of Power MOSFETs Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210 Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	PDF	AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210