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    IRF640 P CHANNEL MOSFET Search Results

    IRF640 P CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF640 P CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco

    irf640

    Abstract: IRF640FP IRF640 P CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET

    irf640

    Abstract: Vdd-100V IRF640 n-channel MOSFET IRF640 applications note datasheet for irf640 TO-220aB 11A
    Text: IRF640 N-Channel Enhancement Mode POWER MOSFET DRAIN CURRENT 18 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOURCE VOLTAGE 200 VOLTAGE 1 GATE Features: *Super High Dense Cell Design For Low R DS(ON) 2 SOURCE R DS(ON) <0.18Ω@V GS =10V * * * * * Single Pulse Avalanche Energy Rated


    Original     		PDF IRF640 O-220AB 04-Nov-08 irf640 Vdd-100V IRF640 n-channel MOSFET IRF640 applications note datasheet for irf640 TO-220aB 11A

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET

    power MOSFET IRF640 fp

    Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    PHP18NQ10T

    Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
    Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America


    Original     		PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    STF12PF06

    Abstract: STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z
    Text: Power MOSFETs progress in power switching Selection guide May 2005 www.st.com/pmos MDmesh product range VDSS [V] RDS on (max) @ 10V [Ω] STE70NM50 500 0.05 190 190 70 ISOTOP 532 9.9 37 15 STY60NM50 500 0.05 190 190 60 Max247 532 9.9 37 15 STW45NM50FD 500


    Original     		PDF STE70NM50 STY60NM50 Max247 STW45NM50FD O-247 STE48NM50 STW45NM50 STW26NM50 STF12PF06 STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z

    amidon T200-2

    Abstract: 150w mosfet audio amplifier MUR120T3 150w stereo amplifier PCB layout TA0102A TRIPATH TECHNOLOGY T200-2 "subwoofer amplifiers" Speaker 80W STP19NB20
    Text: TECHNICAL INFORMATION Stereo 80W 4Ω Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology TA0102A February 1999 – Preliminary General Description The TA0102A is an 80W (4Ω), two channel Amplifier Driver Module which uses Tripath’s


    Original     		PDF TA0102A TA0102A amidon T200-2 150w mosfet audio amplifier MUR120T3 150w stereo amplifier PCB layout TRIPATH TECHNOLOGY T200-2 "subwoofer amplifiers" Speaker 80W STP19NB20

    12v 60W subwoofer CIRCUIT DIAGRAM

    Abstract: amidon T200-2 12v 200W subwoofer CIRCUIT DIAGRAM MUR120T3 TA0103A 2 channel 150w audio amplifier circuit diagram 150w mosfet audio amplifier 200w subwoofer circuit T200-2 "subwoofer amplifiers"
    Text: TECHNICAL INFORMATION Stereo 150W 4Ω Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology TA0103A February 1999 - Preliminary General Description The TA0103A is a 150W (4Ω), two channel Amplifier Driver Module which uses Tripath’s


    Original     		PDF TA0103A TA0103A 12v 60W subwoofer CIRCUIT DIAGRAM amidon T200-2 12v 200W subwoofer CIRCUIT DIAGRAM MUR120T3 2 channel 150w audio amplifier circuit diagram 150w mosfet audio amplifier 200w subwoofer circuit T200-2 "subwoofer amplifiers"

    12v 60W subwoofer CIRCUIT DIAGRAM

    Abstract: 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W subwoofer CIRCUIT DIAGRAM TA0103A amidon T200-2 MUR120T3 TRIPATH ta0103a diagram for a 12v 250w power amplifier 250w audio amplifier circuit diagram 12v single supply 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA0103A Stereo 250W 4Ω Class-T Digital Audio Amplifier Driver using Digital Power Processing (DPPTM) Technology Technical Information Revision 3.3 - June 2000 GENERAL DESCRIPTION The TA0103A is a 250W continuous average (4Ω), two channel Amplifier Driver


    Original     		PDF TA0103A TA0103A TA0103 12v 60W subwoofer CIRCUIT DIAGRAM 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W subwoofer CIRCUIT DIAGRAM amidon T200-2 MUR120T3 TRIPATH ta0103a diagram for a 12v 250w power amplifier 250w audio amplifier circuit diagram 12v single supply 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    BUK2114

    Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
    Text: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A


    Original     		PDF OT223) BUK6213-30A BUK9213-30A BUK7604-40A BUK9604-40A OT404) OT428) BUK7605-30A BUK9605-30A OT226 BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914

    IRFP240

    Abstract: IRF640 SAMSUNG
    Text: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re


    OCR Scan     		PDF IRF640/641 IRFP240/241/242/243 OG121TI O-220 IRF640/IRFP140 IRF641 IRFP241 F642/IRFP242 IRF643/IRFP243 IRF640/641/642/643 IRFP240 IRF640 SAMSUNG

    Untitled

    Abstract: No abstract text available
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V IR F 6 4 0 IR F 6 4 0 F P dss 200 V 200 V R D S o n Id < 0.1 8 Q. < 0.1 8 Q. 18 A 18 A . TYPICAL Ros(on) =0.1 50 £1 . EXTREMELY H IG H dV /dt CAPABILITY . VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP

    transistor U402

    Abstract: U402 221A-06 irf640 304 fet transistor IRF640 applications note 221D MTP20N20E motorola irf640 DIODE MOTOROLA 824
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FE T is d e s ig n e d fo r lo w V v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s such as s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id


    OCR Scan     		PDF IRF640 21A-06 TQ-220AB) O-220 transistor U402 U402 221A-06 irf640 304 fet transistor IRF640 applications note 221D MTP20N20E motorola irf640 DIODE MOTOROLA 824

    IRFZ44 equivalent

    Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
    Text: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450


    OCR Scan     		PDF IRFK4H054 IRFK4H150 IRFK4H250 IRFK4H350 IRFK4H450 IRFK4HC50 IRFK4HE50 IRFK4J054 IRFK4J150 IRFK4J250 IRFZ44 equivalent IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034

    irf740 switching 3 phase motor driver

    Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
    Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can


    OCR Scan     		PDF

    irf*234 n

    Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
    Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5


    OCR Scan     		PDF 4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10

    power MOSFET IRF740 driver circuit

    Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
    Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can


    OCR Scan     		PDF

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    BUZ71A equivalent

    Abstract: IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642
    Text: y i/ iy j x iy i/ i F ix e d O u tp u t 10W CM O S Step-U p S w itc h in g R eg u lato rs _ F eatu res The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range.


    OCR Scan     		PDF MAX641/MAX642/MAX643 MAX641/642/643 BUZ71A equivalent IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642