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    IRF630 N CHANNEL Search Results

    IRF630 N CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    IRF630 N CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF630

    Abstract: mosfet irf630fp IRF630FP JESD97
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP O-220 IRF630 mosfet irf630fp IRF630FP JESD97

    IRF630

    Abstract: irf630 mosfet
    Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP IRF630 irf630 mosfet

    irf630

    Abstract: 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP irf630 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220

    IRF630

    Abstract: IRF630FP
    Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP IRF630 IRF630FP

    IRF630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630
    Text: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ VDSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF630 IRF630FI 100oC O-220 ISOWATT220 IRF630 IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630

    Untitled

    Abstract: No abstract text available
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP

    IRF630 MOTOR CONTROL CIRCUIT

    Abstract: No abstract text available
    Text: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF630 IRF630FI 100oC O-220 ISOWATT220 IRF630 MOTOR CONTROL CIRCUIT

    irf630

    Abstract: irf630 equivalent schematic diagram UPS 600 Power free IRF630FP MOSFET IRF630
    Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP irf630 irf630 equivalent schematic diagram UPS 600 Power free IRF630FP MOSFET IRF630

    IRF630

    Abstract: mosfet morocco IRF630FP IRF630 p
    Text: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/FP IRF630F O-220 O-220FP IRF630 mosfet morocco IRF630FP IRF630 p

    IRF630

    Abstract: IRF630FP
    Text: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630 IRF630FP O-220/FP IRF630F O-220 O-220FP IRF630 IRF630FP

    irf630

    Abstract: mosfet irf630
    Text: DC COMPONENTS CO., LTD. IRF630 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		PDF IRF630 O-220AB irf630 mosfet irf630

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL

    IRF632 datasheet

    Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. IRF632 datasheet IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild

    irf630

    Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A


    Original     		PDF IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips

    irf630

    Abstract: pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company N-CHANNEL ENHANCEMENT MODE FIELD EFFECT POWER TRANSISTOR IRF630 TO-220 Plastic Package High Switching Speed, Low Static Drain-Source On Resistance ABSOLUTE MAXIMUM RATINGS Ta=25oC unless specified otherwise


    Original     		PDF IRF630 O-220 C-120 IRF630 060105D pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor

    irf630

    Abstract: rf1s630sm9a IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power


    Original     		PDF IRF630, RF1S630SM IRF63 O220AB O263AB RF1S630SM irf630 rf1s630sm9a IRF630 Fairchild

    200v mosfet

    Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
    Text: INCHANGE MOSFET IRF630 N-channel mosfet transistor ‹ Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		PDF IRF630 O-220 O-220 200v mosfet n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF630 O-220

    IRF630

    Abstract: TD 1409
    Text: IRF630 Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D Drain G S Gate Drain Source N Channel ELECTRICAL CHARACTERISICS at Parameter Symbol Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Value Test Conditions Symbol


    Original     		PDF IRF630 -20VDC 160VDC, 20VDC 10VDC, O-220-AB IRF630 TD 1409

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF630, RF1S630SM 400i2

    irf630

    Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve
    Text: Standard Power M O SFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power M O S Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A, 150V-200V rDs on = 0.4 Cl and 0.6 fi Features:


    OCR Scan     		PDF IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 irf630 IPF630 1RF631 IRF631 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve

    irf630

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF630/631 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower Input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF630/631 IRF630 IRF631 irf630

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF630 21A-06 O-220AB) b3b7254

    IRF630

    Abstract: IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233
    Text: IRF630/631Z632/633 IR FP230/231/232/233 N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds <on • • • • • Improved inductive ruggedness Fast switching times Rugged polysilfcon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRF630/631Z632/633 FP230/231/232/233 O-220 IRF630/IRFP230 IRF631 /IRFP231 IRF632/IRFP232 IRF633/IRFP233 IRF630/631/632/633 IRFP230/231/232/233 IRF630 IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233