AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
|
Original
|
PDF
|
IRF530/D
IRF530
AN569
IRF530
|
IRF530
Abstract: tr irf530
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
|
Original
|
PDF
|
IRF530
O-220
IRF530
tr irf530
|
DM 321
Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Text: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate
|
Original
|
PDF
|
IRF530
IRF530,
RF1S530SM
DM 321
IRF530 mosfet
TA17411
RF1S540SM9A
IRF530 data sheet in
IRF530 datasheet
N-Channel Switch intersil
relay 6v 100 ohm
tr irf530
|
IRF530
Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
PDF
|
IRF530
IRF530FI
IRF530F
100oC
175oC
O-220
O-220FI
IRF530
transistor irf530
IRF530FI
IRF530 application
O-220F
transistor irf 130
O220F
tr irf530
|
irf530
Abstract: 929E-10 IRF530 fairchild
Text: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power
|
Original
|
PDF
|
IRF530
IRF53
O220AB
O-220AB
O-220AB
IRF530
929E-10
IRF530 fairchild
|
RF1S540
Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power
|
Original
|
PDF
|
IRF530,
RF1S530SM
IRF53
O220AB
O263AB
RF1S540
RF1S540SM9A
RF1S530SM
OF IRF530
530uH
|
IRF530 mosfet
Abstract: TA17411 IRF530 TB334 irf530g
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power
|
Original
|
PDF
|
IRF53
O220AB
O263AB
IRF530
IRF530 mosfet
TA17411
IRF530
TB334
irf530g
|
2N4351 MOTOROLA
Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132
|
Original
|
PDF
|
2SK355
IRF241
2SK357
BUZ30
BUZ43A
IRF623
2SK358
BUZ60
2SK382
2N4351 MOTOROLA
MRF966
3SK124
2N3819 MOTOROLA
BFS28
3SK45
BSV81
2N4221 motorola
BC547 MOTOROLA
3SK76
|
cds photo diode
Abstract: IRF530 marking
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
|
Original
|
PDF
|
IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
cds photo diode
IRF530 marking
|
91019-04
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
|
Original
|
PDF
|
IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
91019-04
|
Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
|
Original
|
PDF
|
IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
Original
|
PDF
|
IRF530
300ns,
530nH,
|
Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
|
Original
|
PDF
|
IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
IRF530 vishay
Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
|
Original
|
PDF
|
IRF530,
SiHF530
O-220
O-220
18-Jul-08
IRF530 vishay
IRF530PBF
tr irf530
IRF530
SiHF530-E3
IRF530P
|
|
|
IRF530 marking
Abstract: irf530
Text: 4Ô55M52 DOlMbSb DbS International Rectifier 11NR PD-9.3070 IRF530 HEXFET Power M O S F E T bSE T> INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
|
OCR Scan
|
PDF
|
55M52
IRF530
OG14bbl
IRF530 marking
irf530
|
RF530
Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Text: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS
|
OCR Scan
|
PDF
|
T-39-11
IRF530
IRF531
IRF532
IRF533Î
O-220AB
IRF530,
IRF531,
IRF532,
IRF533
RF530
1RF530
IRF530 HEXFET TRANSISTORS
IR IRF532
1RF531
TYN 058
LIRF530
|
irf530
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
|
OCR Scan
|
PDF
|
IRF530/531
IRF530
IRF531
Q02fl755
irf530
|
IRF530
Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Text: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
|
OCR Scan
|
PDF
|
IRF530,
IRF531,
IRF532,
IRF533,
RF1S530,
RF1S530SM
IRF530
IR IRF532
IRF531
OF IRF530
TA17411
f531
RF1S540
RF1S540SM9A
irf532
rf1s530sm
|
IRF530
Abstract: IRF530 marking
Text: PD-9.3070 International [I«R ]Rectifier IRF530 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS=100V R DS on = 0 - 1 6 0
|
OCR Scan
|
PDF
|
IRF530
O-220
IRF530
IRF530 marking
|
IRF530
Abstract: No abstract text available
Text: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
|
OCR Scan
|
PDF
|
IRF530
O-220
T0-220
IRF530
|
TA17411
Abstract: No abstract text available
Text: IRF530, RF1S530SM S e m iconductor Data Sheet 14A, 100 V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
|
OCR Scan
|
PDF
|
IRF530,
RF1S530SM
160i2
TA17411
|
IRF530
Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
Text: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
|
OCR Scan
|
PDF
|
70S7f
IRF530
IRF531
IRF532
IRF533
O-220
IRF533
1RF533
t5d 58
reliability irf530
irf-530
|
irf530
Abstract: transistor sec 623
Text: Tem ic IRF530 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (Q) 0.18 I d (A) 14 TO -220AB o DRAIN connected to TAB Ô GD S s lop View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
|
OCR Scan
|
PDF
|
-220AB
IRF530
P-36852--Rev.
IRF530_
irf530
transistor sec 623
|
pj 69 diode
Abstract: F533R IRF530 IRF
Text: 2 HARRIS IRF530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* ay 1992 Features • Package T0220AB 12A and 14A, 80V - 100V TO P VIEW • rDS °n = 0.16 fl and 0.23ft • Single Pulse Avalanche Energy Rated* DRAIN (F L A N G E )
|
OCR Scan
|
PDF
|
IRF530/531/532/533
IRF530R/531R/532R/533R
T0220AB
IRF530,
IRF531,
IRF532,
IRF533
IRF530R,
IRF531R,
IRF532R
pj 69 diode
F533R
IRF530 IRF
|
