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    IRF231 Search Results

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    IRF231 Price and Stock

    UNMARKED IRF231

    TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,9A I(D),TO-204AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF231 2
    • 1 $5.82
    • 10 $4.85
    • 100 $4.85
    • 1000 $4.85
    • 10000 $4.85
    		Buy Now

    Harris Semiconductor IRF231

    9.0A, 150V, 0.4 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF231 372 1
    • 1 $0.9028
    • 10 $0.9028
    • 100 $0.8486
    • 1000 $0.7674
    • 10000 $0.7674
    		Buy Now

    IRF231 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF231 Intersil 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 ?, N-Channel Power MOSFETs Original PDF
    IRF231 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 150-200 V Scan PDF
    IRF231 FCI POWER MOSFETs Scan PDF
    IRF231 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF231 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF231 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. Scan PDF
    IRF231 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF231 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF231 Motorola European Master Selection Guide 1986 Scan PDF
    IRF231 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF231 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF231 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF231 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF231 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF231 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF231 Unknown FET Data Book Scan PDF
    IRF231 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF231 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF231 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    IRF231 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    IRF231 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF232

    Abstract: IRF230 IRF231 IRF233 TB334
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF230, IRF231, IRF232, IRF233 IRF232 IRF230 IRF231 IRF233 TB334

    irf230

    Abstract: IRF2301 irf232
    Text: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF230, IRF231, IRF232, IRF233 TA17412. irf230 IRF2301 irf232

    Untitled

    Abstract: No abstract text available
    Text: IRF231 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF231

    Untitled

    Abstract: No abstract text available
    Text: IRF231R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF231R

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    250M

    Abstract: IRF240
    Text: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)


    OCR Scan     		PDF IRF230/D86DN2 IRF231/D86EM2 00A//usec, 250M IRF240

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


    OCR Scan     		PDF Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V

    Untitled

    Abstract: No abstract text available
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF230, IRF231, IRF232, IRF233

    Equivalent IRF 44

    Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
    Text: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,


    OCR Scan     		PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1

    ZO 150

    Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101
    Text: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S | ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode


    OCR Scan     		PDF IRF230, IRF231, IRF232, IRF233 50V-200V IRF232 IRF233 IF230 ZO 150 dg1u IRF230 1RF232 IRF231 IRF23 ic l00a S101

    IRF224

    Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
    Text: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250


    OCR Scan     		PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF224 irf244 THOMSON DISTRIBUTOR 58e d IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221

    1RF230

    Abstract: No abstract text available
    Text: h e D I qassMsa aaa^Gaq 7 | Data Sheet No. PD-9.306G INTERNATIONAL R E C T I F I E R IN T E R N A T IO N A L R E C IT I F l E R TO R T-39-11 HEXFET TRANSISTORS IRF23Q IRF231 IRFS3S Channel IRFS33 Features: 200 Volt, 0.4 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF T-39-11 IRF23Q IRF231 IRFS33 aIRF231, IRF232, IRF233 1RF230

    Untitled

    Abstract: No abstract text available
    Text: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)


    OCR Scan     		PDF hSD113D T-39-01

    IRF230R

    Abstract: IRF231R IRF232R IRF233R
    Text: _Rugged Power MOSFETs File N u m b er IRF230R, IRF231R, IRF232R, IRF233R 1999 Avalanche Energy Rated N-Channel Power M OSFETs 8.0A and 9.0A, 150V-200V rDs on = 0 .4 0 and 0.6CÌ N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF230R, IRF231R, IRF232R, IRF233R 50V-200V IRF232R IRF233R 92CS-426 IRF230R IRF231R

    IRF231

    Abstract: irf233 irf230 irf232
    Text: IRF230, IRF231, IRF232, IRF233 HARRIS S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF230, IRF231, IRF232, IRF233 TA17412. RF232, IRF231 irf233 irf230 irf232

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252

    IRF232

    Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
    Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re


    OCR Scan     		PDF IRF220, IRF221, IRF222, IRF223 08TAIN 50KSZ IRF232 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441

    DATA SHEET IRF331

    Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i


    OCR Scan     		PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D DATA SHEET IRF331 IRF540 IRF44 VN2410M IVN6200CNH

    irf840

    Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


    OCR Scan     		PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55

    1RF321

    Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


    OCR Scan     		PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452

    Equivalent IRF 44

    Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
    Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


    OCR Scan     		PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422