IN5834
Abstract: IN5833 IN5832 N5834 1N5 diode 1N5832 1N5833
Text: IN5832 1N5833 IN5834 I HOT CARRIER POWER RECTIFIER I , employing the Schottky Barrier principle in a large area metal-to-silicon power diode, State of the art’geometrv features epitaxial construction with oxide passivation and metal overlap contact. Ideallv suited for use as rectifiers in low-voltage,
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IN5832
1N5833
IN5834
IN5834
IN5833
IN5832
N5834
1N5 diode
1N5832
1N5833
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TIC2260
Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500
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DDQD035
MR500
IN5400
IN1612
IN1341A
MR750
IN1199A
IN3208
IN248B
IN1191A
TIC2260
C10601
SC141D
IN5829
IN3492
in540i
IN1190
IN3493
IN1183A
IN1184
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TIC2260
Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200
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MR500
IN5400
IN1612
IN1341A
MR750
IN1199A
IN3208
IN248B
IN1191A
IN2154
TIC2260
t25000
IN1190
IN5829
IN3492
IN1184A
sc1430
jb33
IN2158
in5834
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SD5115
Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
Text: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3
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MR500
MR501
MR502
MR504
MR506
MR508
MR510
IN3491
IN3492
IN3493
SD5115
in1615
IN1202A
IN5829
IN3495
IN3880
2N15
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300
in5388
2N5161
germanium
4m28
Germanium drift transistor
2N5070
1NS248
2N5271
inverter welder 4 schematic
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TIC2260
Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495
Text: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406
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MR500
IN5400
IN1612
IN1341A
MR750
IN1199A
IN3208
IN248B
IN1191A
N2154
TIC2260
IN3491
IN1202
IN3492
IN5829
IN1204
IN1190
IN1184
SC141D
IN3495
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1N5000
1N5001
1N5002
1N5003
1N5149
1N5150
1N5153
1N5155
1N5158
1N5159
1N5160
MAX 6438 GEO SEMICONDUCTORS
2N6058
transistor bf 175
2N3902
2N5696
1N5788
Germanium itt
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