in4531
Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes
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M3D050
1N4531;
1N4532
DO-34)
1N4531,
1N4532
in4531
IN453
1N4531
IN4532
DO-34
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in4531
Abstract: 1N4532 1N4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D050
1N4531;
1N4532
DO-34)
1N4531,
1N4532
MAM156
in4531
1N4531
IN4532
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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PDF
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M3D050
1N4531;
1N4532
DO-34)
1N4531,
1N4532
MAM156
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1N4532
Abstract: 1N4531 IN4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D050
1N4531;
1N4532
DO-34)
1N4531,
1N4532
MAM156
1N4531
IN4531
IN4532
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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IN4531
Abstract: IN4532 1N4532 1N4531
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes
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Original
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M3D050
1N4531;
1N4532
DO-34)
1N4531,
1N4532
IN4531
IN4532
1N4531
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N4532
Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
Text: Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leadedglass SOD68 DO-34 package The 1N4531, 1 N4532 are high-speed switching diodesfabricated in planar technology, and encapsulated in hermetically sealed leaded glass
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1N4531;
1N4532
DO-34)
1N4531
1N4532
IN4532
S0068
IN4531
IR 10D DIODE
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1N4532
Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Text: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic
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1N643;
1N662;
1N663;
1N643
1N662
1N663
MIL-S-19500/256
1N662
1N4532
1n4631
IN643
1n662 jantx
1N3064
1N4151
1N4154
1N4534
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diode 13J2
Abstract: DIODE smd marking CODE WA smd ic marking 1ft IT129 13J2 cb pj 47 diode LM 3883 smd diode pj 72 ITG40 t31d
Text: MIL-M-38510/420A 26 OCTOBER 1984 W ERSEÜPŒ -MIL-M-38510/420 USAF 27 September 1977 MILITARY SPECIFICATION 1 MICROCIRCUITS, DIGITAL, N-CHANNEL, SILICON GATE MONOLITHIC 8 BIT MICROPROCESSOR {FIXED INSTRUCTION) This sp ecificatio n is approved for use by a ll Departments and
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MIL-M-38510/420A
MIL-M-38510/420
MIL-M-38510.
diode 13J2
DIODE smd marking CODE WA
smd ic marking 1ft
IT129
13J2
cb pj 47 diode
LM 3883
smd diode pj 72
ITG40
t31d
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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IN1184A
Abstract: IN1184 IN1190 IN1186A in3768 A72D IN1190A IN1187 in1188a IN1188
Text: RICHARDSON/ N A T I O N A L EL bZE D • 7 7 3 4 1 1 7 □□□070fl 54S ■ NAT SILICON DIODES JEDEC TYPE NATIO N AL TYPE NO. IN2155-60 IN1184-90 IN3765-68 IN5332 IN4529-30 IN1184A-90A A77 A72 25 75 25 145 35 140 35 500 40 115 70 100 70 120 A139 AV Max. average forward
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070fl
IN2155-60
IN1184-90
IN3765-68
IN5332
IN4529-30
IN1184A-90A
IN2156
IN1186
IN1186A
IN1184A
IN1184
IN1190
in3768
A72D
IN1190A
IN1187
in1188a
IN1188
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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