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    IN118 Search Results

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    IN118 Price and Stock

    Military Specifications IN1186

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    Bristol Electronics IN1186 12
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    InFocus Corporation IN118BBST

    MULTIMEDIA P132 1080P SHRT THRW
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    NAC IN118BBST 2 1
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    InFocus Corporation IN118BB

    MULTIMEDIA MODEL P131 1080P
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    InFocus Corporation IN1188HD

    IN1188HD DLP PROJ 3000L FHD
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    IN118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OCX1601

    Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
    Text: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.


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    PDF 2001--Preliminary 2002--Fairchild 2003--Corrected OCX160. OCX1601 in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601

    N38 transistor

    Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


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    PDF OCX256 85Gb/s all2593, MKT-OCX256-DS N38 transistor w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39

    Untitled

    Abstract: No abstract text available
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    PDF OCX256 85Gb/s OCX256L) OCX256P)

    Scan AV6

    Abstract: No abstract text available
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    PDF OCX256 85Gb/s OCX256L) OCX256P) Scan AV6

    IN126P

    Abstract: AA-38 AH36 AR24
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    PDF OCX256 85Gb/s OCX256L) OCX256P) IN126P AA-38 AH36 AR24

    IN96

    Abstract: No abstract text available
    Text: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical


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    PDF 128-Channel AD8488 AD8488 128-channel, MS-034-AAF-1 92409-A 255-Ball BC-255-1) AD8488KBCZ IN96

    IN117

    Abstract: aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


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    PDF OCX256 85Gb/s MKT-OCX256-DS IN117 aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92

    IN117

    Abstract: in60p OCX256 IN104 TBGA792 crosspoint 256 x 256 IN126P
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    PDF OCX256 85Gb/s OCX256L) OCX256P) One-5428750, IN117 in60p IN104 TBGA792 crosspoint 256 x 256 IN126P

    IN126P

    Abstract: IN125P IN117P IN118P IN68P diode ak38 IN121P diode ae38 AF39 OCX256
    Text: Preliminary Revised March 2003 OCX256L OCX256P Crosspoint Switch with LVDS Preliminary • Crosspoint Switch with LVPECL (Preliminary) • 256 configurable I/O ports General Description The OCX256 SRAM-based devices are non-blocking 128 X 128 digital crosspoint switches and are available in LVDS


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    PDF OCX256L OCX256P OCX256 OCX256P IN126P IN125P IN117P IN118P IN68P diode ak38 IN121P diode ae38 AF39

    in78

    Abstract: IN118 IN116 IN109 IN117 in76 IN103 MS-034 AAF-1 in107 IN104
    Text: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical


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    PDF 128-Channel AD8488 AD8488 128-channel, 92409-A MS-034-AAF-1 255-Ball BC-255-1) AD8488KBCZ in78 IN118 IN116 IN109 IN117 in76 IN103 MS-034 AAF-1 in107 IN104

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    n37 transistor

    Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


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    PDF OCX256 85Gb/s all5202593, MKT-OCX256-DS n37 transistor AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N

    IN1184A

    Abstract: IN1190 IN1185A IN1183A IN1184 C220D IN1188 C220B IN3659 C220E
    Text: "as dF|dE5A3S4 00DD03b 1 g e n e r a l p u r p o s e r e c t if ie r s 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 3 6 10 AVERAGE RECTIFIED FORWARD CURRENT AMPERES C 30 35 IN3659 IN1183 IN1184 IN1185 IN1186 IN1183A IN1186A IN3289 IN3289A IN3263 IN1187


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    PDF 00DD03b IN3659 IN3660 IN3661 IN3563 IN1183 IN1184 IN1185 IN1186 IN1187 IN1184A IN1190 IN1185A IN1183A C220D IN1188 C220B C220E

    IN1184A

    Abstract: IN1184 IN1190 IN1186A in3768 A72D IN1190A IN1187 in1188a IN1188
    Text: RICHARDSON/ N A T I O N A L EL bZE D • 7 7 3 4 1 1 7 □□□070fl 54S ■ NAT SILICON DIODES JEDEC TYPE NATIO N AL TYPE NO. IN2155-60 IN1184-90 IN3765-68 IN5332 IN4529-30 IN1184A-90A A77 A72 25 75 25 145 35 140 35 500 40 115 70 100 70 120 A139 AV Max. average forward


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    PDF 070fl IN2155-60 IN1184-90 IN3765-68 IN5332 IN4529-30 IN1184A-90A IN2156 IN1186 IN1186A IN1184A IN1184 IN1190 in3768 A72D IN1190A IN1187 in1188a IN1188

    IN1183

    Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
    Text: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*


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    PDF 1N11B3, 1N3765, 1N11S3A, 1N212BA 1N1183 1N3765 1N1183A 1N2128A IN1183 IOR 5250 IN1190 PD-2087 N1190 1N1133

    1N1184 JAN

    Abstract: 1N1184 1N119 1n2130
    Text: SEN I CO N COnPONENTS INC 2flE D • 8 1 3 5 15 7 0000fl3b □ STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS t rr TYPE NUMBER PRV VOLTS VF TEIIR CURRENT AMPERES V TEMP AMPS ?c *R jtA TEMP oC VsM nS RATIO AMPS 1N2488 1N249B 1N250B 1N11B3 1N1183A


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    PDF 0000fl3b 1n248b 1n249b 1n250b 1n11s3 1n1183a 1n1184 1n1184a 1n1185 1n1185a 1N1184 JAN 1N119 1n2130

    1N2222A

    Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
    Text: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244


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    PDF oQoos11! DO-41case 1N3549 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N2222A 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053

    LT3973-3.3

    Abstract: L1117T-3.3 LT3971-3.3
    Text: jomitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont'd stud mounted silicon power rectifiers DO-4 case style — cont’d T »« Maximum Maximum Average Forward Peak Reverse Current (Amps) Voltage @ Case Temp. (°C) (volts)


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    PDF 1NU88A 1N1189 1N1189A 1N1190 I190A LT3973-3.3 L1117T-3.3 LT3971-3.3

    TIC2260

    Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
    Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500


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    PDF DDQD035 MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A TIC2260 C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    TIC2260

    Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
    Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200


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    PDF MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A IN2154 TIC2260 t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834

    1N1120

    Abstract: 1N2484 1N342 1N2226
    Text: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500


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    PDF 1N3241 1N3242 1N3243 1N3244 1N3245 1H253 1N254 1N255 150J7 1N1120 1N2484 1N342 1N2226

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d