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    IGBT 1000V 100A 10 KHZ Search Results

    IGBT 1000V 100A 10 KHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1000V 100A 10 KHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF I27243 GA100TS120UPbF GA100TS120UPBF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz OT-227

    IGBT 1000V .200A

    Abstract: irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX
    Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27221 GA200TS60UX IGBT 1000V .200A irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA100TS120U GA100TS120U

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF 50060B GA100TS120U T52-7105 GA100TS120U

    igbt 1000v 10A

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt 1000v 10A

    igbt induction cooker

    Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt induction cooker induction heating cooker induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater

    GA200TS60UX

    Abstract: IGBT 100V 200A
    Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27221 GA200TS60UX 12-Mar-07 GA200TS60UX IGBT 100V 200A

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27221 GA200TS60UX 08-Mar-07

    ga200sa60up

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz 12-Mar-07 ga200sa60up

    g50n60hs

    Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
    Text: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-1 SGW50N60HS 100substances. g50n60hs G50N60 G50N60*HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3-21 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60

    G50N60*HS

    Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-21 SGW50N60HS 100stances. G50N60*HS g50n60hs 200nC G50N60

    igbt 1000v 100a 10 khz

    Abstract: No abstract text available
    Text: APTGT100TL170G Three level inverter Trench + Field Stop IGBT Power Module VCES = 1700V IC = 100A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop


    Original     		PDF APTGT100TL170G igbt 1000v 100a 10 khz

    Untitled

    Abstract: No abstract text available
    Text: APTGT100TL170G Three level inverter Trench + Field Stop IGBT Power Module VCES = 1700V IC = 100A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop


    Original     		PDF APTGT100TL170G

    m5x0.8

    Abstract: ge 142 GA200NS61U
    Text: PD -94347 GA200NS61U High Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features 3 • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200NS61U m5x0.8 ge 142 GA200NS61U

    irf 1740

    Abstract: GA200TD120U
    Text: PD - 5.061B PRELIMINARY GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200TD120U irf 1740 GA200TD120U

    g30n60hs

    Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS g30n60hs G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21

    ir 249A

    Abstract: GA200TD120U W80S
    Text: PD - 50061C GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF 50061C GA200TD120U ir 249A GA200TD120U W80S

    GA200SA60SP

    Abstract: No abstract text available
    Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    Original     		PDF I27235 GA200SA60SP OT-227 OT-227 GA200SA60SP

    g30n60hs

    Abstract: g30n60 SGW30N60HS 1A20A
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60 1A20A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGKI0100M12 IGST21 002E132

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data S heet No. P D -9.938 International S Rectifier IRGNI0100M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT V CE= 1 2 0 0 V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGNI0100M12 0Q221bQ