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    IGBT 1000V .200A

    Abstract: irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX
    Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27221 GA200TS60UX IGBT 1000V .200A irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX

    GA200TS60UX

    Abstract: IGBT 100V 200A
    Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27221 GA200TS60UX 12-Mar-07 GA200TS60UX IGBT 100V 200A

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27221 GA200TS60UX 08-Mar-07