calculation of IGBT snubber
Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: [email protected]
|
Original
|
PDF
|
EPE99,
T0900TA52E
calculation of IGBT snubber
abb press-pack igbt
IEGT
press-pack igbt
IEGT presspack
McMurray
6.5kV IGBT
GTO 4.5kv
press-pack iegt
IGBT 3.3KV ABB
|
E355D
Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20
|
OCR Scan
|
PDF
|
|
2SC1593
Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is
|
OCR Scan
|
PDF
|
b427414
NE64300
NE64310
NE64320
NE643
NE64300)
NE64310)
NE64320)
2SC1593
2SC1041
GE-64
NEC k 2134 transistor
NE64320
V020
transistor BU 189
|
SN7401
Abstract: National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27
Text: GENERAL INFORMATION ORDERING INSTRUCTIONS AND MECHANICAL DATA FUNCTIONAL INDEX/SELECTION GUIDE PRODUCT GUIDE ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS PROGRAMMABLE LOGIC ARRAYS BETA PRODUCTS EXPLANATION OF NEW LOGIC SYMBOLS CONNECTOR AND KEYBOARD PRODUCTS
|
OCR Scan
|
PDF
|
SN54/74
SN54ALS8003
SN74ALS8003
SN7401
National Semiconductor 4045
transistor bf 175
74ALS569
74AS1008
SN7449
SN74ALS244A
SN54ALS1000A
SN74ALS519
SN54ALS27
|
SN7449
Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
|
OCR Scan
|
PDF
|
SN15312
SN15325,
SN15370
SN7449
54175
SN7401
74L42
SN7437
SN74S40
|
information applikation
Abstract: information applikation mikroelektronik mikroelektronik Heft 12 Mikroelektronik Information Applikation mikroelektronik Heft A4100D "Mikroelektronik" Heft applikation heft mikroelektronik applikation VEB mikroelektronik
Text: m o N n ^ e le l-c te n o r iil-c Kp Information Applikation m L r r t l k < I r J[ S J E 2 l E l - < f c i r ,a r - | i t < Information Applikation H e f t : 40 L S - T T L - R e l h e Teil 1 ueb Halbleiterwerk frankfurt /oder* b o t r - ie b im v e t k o m b m a t m ik r o o le k t r o n « k
|
OCR Scan
|
PDF
|
|
SN7401
Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
Text: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S
|
OCR Scan
|
PDF
|
54H/74H,
4L/74L.
Chiana56
SN7401
SN7449
vogt IL 050 321 31 01
VOGT 406 69
74L95
SN74L00
TME 87
SN6407
|
74AS888
Abstract: ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900
Text: Data Book 1986 Bipolar and CMOS LSI/VLSI * 5» Texas In s t r u m ents General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book Te x a s In s t r u m e n t s IM POR TAN T NOTICE Texas Instrum e nts Tl reserves the righ t to make changes in the
|
OCR Scan
|
PDF
|
SN74AS888/890,
SN74AS897,
16-Bit
74AS-EVM-8
SDV01IDV600R
74AS888
ic vertical la 78141
IC LA 78141 schematic
D2822 equivalent
sn74as888
74ALS96
74AS SERIES
74LS222
KJE y3 transistor
TMS9900
|
JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
|
OCR Scan
|
PDF
|
ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
|
NE70083
Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Text: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.
|
OCR Scan
|
PDF
|
fa427414
NE700
NE70000
NE70083.
NE70083-4
NE70083
2SK353
DS 3107
2sk mesfet
1S121
2sk 353
|
SN7441
Abstract: 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p
Text: TTL Integrated Circuits Catalog from Texas Instruments 1 August 1969 T e x a s In s t r u m e n t s IN C O R P O R A T E D P O S T O F F IC E B O X 5 0 1 2 • D ALLAS. TEXAS 75222 GENERAL INFORMATION INDEXES Numerical • Functional • Cross-Reference TTL APPLICATION REPORTS
|
OCR Scan
|
PDF
|
54H/74H
54L/74L
SN7441
74L78
Sw 7441Aj
SN7401
SN7449
7475n itt
u6a9601
N8490
National Semiconductor Linear Data Book
c2003p
|
SN74ALS123
Abstract: SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138
Text: INDEX • FUNCTIONAL SELECTION GUIDE • NUMERICAL FUNCTION INTERCHANGEABILITY GUIDE GENERAL INFORMATION AND EXPLANATION OF NEW LOGIC SYMBOLS ORDERING INSTRUCTIONS AND MECHANICAL DATA 54/74 SERIES OF COMPATIBLE TTL CIRCUITS • PIN OUT DIAGRAMS 54/74 FAMILY SSI CIRCUITS
|
OCR Scan
|
PDF
|
MIL-M-38510
SN74ALS123
SN7401
74LS424
54175
SN74298
SN74265
SN74LS630
SN74LS69
National Semiconductor Linear Data Book
Transistor AF 138
|
NE41607
Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Text: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e
|
OCR Scan
|
PDF
|
b427mM
NE416
NE41635
DE161
NE41607
NC921
Z171
NE41600
2SC2025
50m1n
NE41615
Z128
|
2SB1099
Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Text: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103
|
OCR Scan
|
PDF
|
2SB1072L
2SB1072S
2SB1073
2SB1075
2SB1076M
2SB1077
2SB1078K
2SB1099
MP-45)
2SB1100
2SB1099
2SD1491
2SB1100
2sb111
|
|
2SC1253
Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for
|
OCR Scan
|
PDF
|
MS7414
NE74000
NE74014
NE74020
NE740
E90115
NE74014
2SC12579
2SC1253
E74020
VHF power TRANSISTOR PNP TO-39
TRANSISTOR 2SC 733
|
MSD 7818
Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1
|
OCR Scan
|
PDF
|
6250b
MSD 7818
MN9106
information applikation
7490 N
TDA 5700
information applikation mikroelektronik
udssr hefte
143KT1
Mikroelektronik Information Applikation
K 176 LE, K 561 LN
|
2SC3544
Abstract: IC sn 74 ls 2000
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry
|
OCR Scan
|
PDF
|
NE944
IS12I
IS12S21I
b427525
00L5770
2SC3544
IC sn 74 ls 2000
|
inverter ccfl SP 5001 IC INVERTER
Abstract: free transistor equivalent book 2sc 930 dtl transistor kc 2026 ic est 7502 B1027 transistor SD 5024 SLA 5017 850 va inverter schematic diagram 845N
Text: INTEGRATED CIRCUITS CATALOG Notes on This First Edition T his first e d itio n of T I ’s In te g ra te d C irc u its c atalo g co n ta in s currently published data sheets covering SO LID C IR C U IT semi conductor networks. As new data sheets are published, they will be dis
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
|
OCR Scan
|
PDF
|
NE74000
NE74014
NE740
NE90115
MIL-S-19500.
IS12I
427SB5
|
YD1197
Abstract: YD1195
Text: YD1195 YD1197 8913 8937 RF POWER TRIODE T r io d e s in m e t a l- c e r a m ic c o n stru c tio n intended fo r u se a s in d u s tria l o s c i ll a t o r s . T h e Y D 1195 i s f o r c e d - a i r c o o le d . T h e Y D 1197 h a s an in te g ra l w a te r c o o le r .
|
OCR Scan
|
PDF
|
YD1195
YD1197
YD1195
YD1197
YD1195/YD1197
36min
YD1197.
|
PK-74960-995
Abstract: cd-1 94v-0 PK-74960-996
Text: 12 11 10 J 8 1. M ATERIALS: SH IE LD - D E E P DRAW N S T E E L HOUSING - G LA S S F ILLE D PO LYM ER, BLACK. UL 9 4 V - 0 RE F.- TÔÏ3 ' C O N T A C TS - CO PPER ALLO Y 2. I m 74960 N O TES: ’’□ " R E F . 0.64 -P IT C H 0,33 2 7 a PLATING : TE R M IN A LS - S E L E C T IV E GOLD Au TH IC K N ESS IN C O NTAC T A R E A ,
|
OCR Scan
|
PDF
|
MICROMETERS/15
MICROMETERS/100
MICROMETERS/50
SD-74960-010
PK-74960-995
cd-1 94v-0
PK-74960-996
|
B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
|
OCR Scan
|
PDF
|
|
2SB1099
Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Text: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w
|
OCR Scan
|
PDF
|
2SB966
2SB967
2SB968
2SB970
2SB973
2SB974
2SB1099
MP-45)
2SB1100
2SD1601
2SB1099
2sd1589
2SB1100
2SD1407
2SB1089
2SD1347
|
Untitled
Abstract: No abstract text available
Text: EPCOS Aluminum electrolytic capacitors Capacitors with 4-pin snap-in terminals and solder pins S e rie s/T y p e : Date: B 435 15, B 435 25 D e c e m b e r 20 10 ŒPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the
|
OCR Scan
|
PDF
|
B43515,
B43525
|