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    IC SN 74 LS 2000 Search Results

    IC SN 74 LS 2000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC SN 74 LS 2000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    calculation of IGBT snubber

    Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
    Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: [email protected]


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    PDF EPE99, T0900TA52E calculation of IGBT snubber abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB

    E355D

    Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
    Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20


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    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


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    PDF b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189

    SN7401

    Abstract: National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27
    Text: GENERAL INFORMATION ORDERING INSTRUCTIONS AND MECHANICAL DATA FUNCTIONAL INDEX/SELECTION GUIDE PRODUCT GUIDE ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS PROGRAMMABLE LOGIC ARRAYS BETA PRODUCTS EXPLANATION OF NEW LOGIC SYMBOLS CONNECTOR AND KEYBOARD PRODUCTS


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    PDF SN54/74 SN54ALS8003 SN74ALS8003 SN7401 National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27

    SN7449

    Abstract: 54175 SN7401 74L42 SN7437 SN74S40
    Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a


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    PDF SN15312 SN15325, SN15370 SN7449 54175 SN7401 74L42 SN7437 SN74S40

    information applikation

    Abstract: information applikation mikroelektronik mikroelektronik Heft 12 Mikroelektronik Information Applikation mikroelektronik Heft A4100D "Mikroelektronik" Heft applikation heft mikroelektronik applikation VEB mikroelektronik
    Text: m o N n ^ e le l-c te n o r iil-c Kp Information Applikation m L r r t l k < I r J[ S J E 2 l E l - < f c i r ,a r - | i t < Information Applikation H e f t : 40 L S - T T L - R e l h e Teil 1 ueb Halbleiterwerk frankfurt /oder* b o t r - ie b im v e t k o m b m a t m ik r o o le k t r o n « k


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    SN7401

    Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
    Text: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S


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    PDF 54H/74H, 4L/74L. Chiana56 SN7401 SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407

    74AS888

    Abstract: ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900
    Text: Data Book 1986 Bipolar and CMOS LSI/VLSI * 5» Texas In s t r u m ents General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book Te x a s In s t r u m e n t s IM POR TAN T NOTICE Texas Instrum e nts Tl reserves the righ t to make changes in the


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    PDF SN74AS888/890, SN74AS897, 16-Bit 74AS-EVM-8 SDV01IDV600R 74AS888 ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    NE70083

    Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
    Text: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.


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    PDF fa427414 NE700 NE70000 NE70083. NE70083-4 NE70083 2SK353 DS 3107 2sk mesfet 1S121 2sk 353

    SN7441

    Abstract: 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p
    Text: TTL Integrated Circuits Catalog from Texas Instruments 1 August 1969 T e x a s In s t r u m e n t s IN C O R P O R A T E D P O S T O F F IC E B O X 5 0 1 2 • D ALLAS. TEXAS 75222 GENERAL INFORMATION INDEXES Numerical • Functional • Cross-Reference TTL APPLICATION REPORTS


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    PDF 54H/74H 54L/74L SN7441 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p

    SN74ALS123

    Abstract: SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138
    Text: INDEX • FUNCTIONAL SELECTION GUIDE • NUMERICAL FUNCTION INTERCHANGEABILITY GUIDE GENERAL INFORMATION AND EXPLANATION OF NEW LOGIC SYMBOLS ORDERING INSTRUCTIONS AND MECHANICAL DATA 54/74 SERIES OF COMPATIBLE TTL CIRCUITS • PIN OUT DIAGRAMS 54/74 FAMILY SSI CIRCUITS


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    PDF MIL-M-38510 SN74ALS123 SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138

    NE41607

    Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
    Text: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e


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    PDF b427mM NE416 NE41635 DE161 NE41607 NC921 Z171 NE41600 2SC2025 50m1n NE41615 Z128

    2SB1099

    Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
    Text: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103


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    PDF 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077 2SB1078K 2SB1099 MP-45) 2SB1100 2SB1099 2SD1491 2SB1100 2sb111

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


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    PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


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    PDF 6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN

    2SC3544

    Abstract: IC sn 74 ls 2000
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry


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    PDF NE944 IS12I IS12S21I b427525 00L5770 2SC3544 IC sn 74 ls 2000

    inverter ccfl SP 5001 IC INVERTER

    Abstract: free transistor equivalent book 2sc 930 dtl transistor kc 2026 ic est 7502 B1027 transistor SD 5024 SLA 5017 850 va inverter schematic diagram 845N
    Text: INTEGRATED CIRCUITS CATALOG Notes on This First Edition T his first e d itio n of T I ’s In te g ra te d C irc u its c atalo g co n ta in s currently published data sheets covering SO LID C IR C U IT semi­ conductor networks. As new data sheets are published, they will be dis­


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    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


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    PDF NE74000 NE74014 NE740 NE90115 MIL-S-19500. IS12I 427SB5

    YD1197

    Abstract: YD1195
    Text: YD1195 YD1197 8913 8937 RF POWER TRIODE T r io d e s in m e t a l- c e r a m ic c o n stru c tio n intended fo r u se a s in d u s tria l o s c i ll a t o r s . T h e Y D 1195 i s f o r c e d - a i r c o o le d . T h e Y D 1197 h a s an in te g ra l w a te r c o o le r .


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    PDF YD1195 YD1197 YD1195 YD1197 YD1195/YD1197 36min YD1197.

    PK-74960-995

    Abstract: cd-1 94v-0 PK-74960-996
    Text: 12 11 10 J 8 1. M ATERIALS: SH IE LD - D E E P DRAW N S T E E L HOUSING - G LA S S F ILLE D PO LYM ER, BLACK. UL 9 4 V - 0 RE F.- TÔÏ3 ' C O N T A C TS - CO PPER ALLO Y 2. I m 74960 N O TES: ’’□ " R E F . 0.64 -P IT C H 0,33 2 7 a PLATING : TE R M IN A LS - S E L E C T IV E GOLD Au TH IC K N ESS IN C O NTAC T A R E A ,


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    PDF MICROMETERS/15 MICROMETERS/100 MICROMETERS/50 SD-74960-010 PK-74960-995 cd-1 94v-0 PK-74960-996

    B083D

    Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
    Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik


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    2SB1099

    Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
    Text: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w


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    PDF 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB1099 MP-45) 2SB1100 2SD1601 2SB1099 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347

    Untitled

    Abstract: No abstract text available
    Text: EPCOS Aluminum electrolytic capacitors Capacitors with 4-pin snap-in terminals and solder pins S e rie s/T y p e : Date: B 435 15, B 435 25 D e c e m b e r 20 10 ŒPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the


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    PDF B43515, B43525