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    E90115 Search Results

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    E90115 Price and Stock

    Renesas Electronics Corporation 5V49EE901-158NLGI

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    Renesas Electronics Corporation 5V49EE901-158NLGI8

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    AMETEK Inc 115962 (ALTERNATE: 90-115962)

    Vacuum Motor, Ametek Lamb, 120V, 7.2", 2-stage, peripheral | AMETEK LAMB 115962
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    RS 115962 (ALTERNATE: 90-115962) Bulk 4 6 Weeks 1
    • 1 $415.67
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    AMETEK Inc 115330 (ALTERNATE: 90-115330)

    Vacuum Motor, Ametek Lamb, 120V, 2-stage, 7.2 inch | AMETEK LAMB 115330
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    RS 115330 (ALTERNATE: 90-115330) Bulk 1
    • 1 $333.35
    • 10 $316.68
    • 100 $300.02
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    E90115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


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    PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    2SA1224

    Abstract: E90115
    Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 E90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­


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    PDF NE74014 NE90100 NE90115 NE901 665um) 462um) 690um) IS12I 2SA1224 E90115

    2SA1224

    Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
    Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 E90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­


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    PDF 00GS512 NE90100 NE90115 NE74014 NE901 NE90115 2SA1224 NEC JAPAN 3167 1S955 NE74014