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    SMC Corporation of America NCAX0-IBM01-1600

    CYLINDER, TIE ROD, NCA1 SERIES | SMC Corporation NCAX0-IBM01-1600
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS NCAX0-IBM01-1600 Bulk 5 Weeks 1
    • 1 $227.98
    • 10 $227.98
    • 100 $227.98
    • 1000 $227.98
    • 10000 $227.98
    		Get Quote

    IBM IBM0116160BT3C-70

    FAST PAGE DRAM, 1MX16, 70NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IBM0116160BT3C-70 332
    • 1 $13.2
    • 10 $13.2
    • 100 $5.28
    • 1000 $5.28
    • 10000 $5.28
    		Buy Now

    IBM IBM0116160BT3D-70

    FAST PAGE DRAM, 1MX16, 70NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IBM0116160BT3D-70 59
    • 1 -
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    IBM0116 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IBM0116160BJ3-50 IBM 1M x 16 12/8 DRAM Original PDF
    IBM0116160BJ3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160BJ3-70 IBM DRAM Original PDF
    IBM0116160BT3-50 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, TSOP II, 50-Pin Original PDF
    IBM0116160BT3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, TSOP II, 50-Pin Original PDF
    IBM0116160BT3-70 IBM DRAM Original PDF
    IBM0116160J3-50 IBM DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160J3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160J3-70 IBM DRAM Original PDF
    IBM0116160MJ3-50 IBM DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160MJ3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160MJ3-70 IBM DRAM Original PDF
    IBM0116160MT3-50 IBM DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, TSOP II, 50-Pin Original PDF
    IBM0116160MT3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, TSOP II, 50-Pin Original PDF
    IBM0116160MT3-70 IBM DRAM Original PDF
    IBM0116160PJ3-50 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160PJ3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, SOJ, 42-Pin Original PDF
    IBM0116160PJ3-70 IBM DRAM Original PDF
    IBM0116160PT3-50 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, TSOP II, 50-Pin Original PDF
    IBM0116160PT3-60 IBM DRAM Chip, FPM DRAM, 2MByte, 3.3V Supply, Commercial, TSOP II, 50-Pin Original PDF

    IBM0116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBM0116400M

    Abstract: No abstract text available
    Text: IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • Package: • 4,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck


    Original     		PDF IBM0116400M IBM0116400P IBM01164B0 IBM01164D0 85mA/75mA TSOJ-32 400milx825mil)

    IBM01164004M

    Abstract: IBM0116400B4M IBM0116400M IBM0116400P
    Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


    Original     		PDF IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P

    IBM01161651M

    Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
    Text: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization


    Original     		PDF IBM01161651M IBM0116165P1M IBM0116165M1M IBM0116165B1M IBM0116165 IBM0116165M IBM0116165B IBM0116165P

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - last order; 3/99 last ship IBM01161601M x 1612/8, 5.0VMMDD35DSU-011010627. IBM0116160P1M x 1612/8, 3.3V, LP, SRMMDD35DSU-011010627. IBM0116160M 1M x 1612/8, 5.0V, LP, SRMMDD35DSU-011010627. IBM011616B1M x 1612/8, 3.3VMMDD35DSU-011010627.


    Original     		PDF IBM01161601M 0VMMDD35DSU-011010627. IBM0116160P1M SRMMDD35DSU-011010627. IBM0116160M IBM011616B1M 3VMMDD35DSU-011010627. IBM0116160 IBM0116160M

    IBM0116160BJ3-50

    Abstract: IBM01161601M IBM0116160P1M IBM011616B1M ibm0116
    Text: IBM01161601M x 1612/8, 5.0V. IBM0116160P1M x 1612/8, 3.3V, LP, SR. IBM0116160M 1M x 1612/8, 5.0V, LP, SR. IBM011616B1M x 1612/8, 3.3V. IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


    Original     		PDF IBM01161601M IBM0116160P1M IBM0116160M IBM011616B1M IBM0116160 IBM0116160M IBM0116160B IBM0116160P 43G9618 SA14-4207-04 IBM0116160BJ3-50 ibm0116

    IBM01164004M

    Abstract: IBM0116400B4M IBM0116400M
    Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


    Original     		PDF IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P

    Untitled

    Abstract: No abstract text available
    Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116165 IBM0116165M IBM0116165B IBM0116165P 115ns 100ns. 200nA

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P SA14-4203-06 200nA

    Untitled

    Abstract: No abstract text available
    Text: IBM0116180 IBM0116180B A d van ce 1M x 18 DRAM Features • 1,048,576 w ord by 18 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 4096 refresh cyd e s/6 4 m s • Low Power Dissipation - Active max - 9 5m A /85m A /75m A /65m A


    OCR Scan     		PDF IBM0116180 IBM0116180B 110ns 130ns 150ns SO/44

    0116405

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO ORAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P 104ns 124ns 200nA 300nA 0116405

    0316809c

    Abstract: No abstract text available
    Text: Alphanumeric Index Part Num ber Type O rganization Features Page Num ber IBM011616 0. D R A M . 1M x 1 6 . 12/8, 5 .0 V . . 249 IBM0116160 B . . D R A M . 1M x 1 6 . 12/8, 3 .3 V . 249


    OCR Scan     		PDF IBM011616 IBM0116160 IBM0116160M IBM0116160P. IBM011618 IBM0165800B. 0316169C 0316409C 0316809C 0316809c

    Untitled

    Abstract: No abstract text available
    Text: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116160 IBM0116160M IBM0116160B IBM0116160P 15nsback-to-back

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation - Active max - 85 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P

    IBM0116160BJ3-70

    Abstract: No abstract text available
    Text: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116160 IBM0116160M IBM0116160B IBM0116160P 200nA 300nA IBM0116160BJ3-70

    0116405

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P SA14-4226-06 0116405

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA SA14-4203-04

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400M IBM0116400P 4M x 4 Low Power DRAM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 4096 refresh cycles/256m s • High Perform ance: -50 -60 -70 • Low Power Dissipation - A ctive max - 95m A /85m A /75m A /65m A


    OCR Scan     		PDF IBM0116400M IBM0116400P cycles/256m 200nA

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4 096 Refresh Cycles


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA IBM0116400P 0116400B

    0118160B

    Abstract: 0116165B 014400B 0117805 014400
    Text: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343


    OCR Scan     		PDF IBM0116160M 0116160P. 0116165B. 0116165M 0118160B 0116165B 014400B 0117805 014400

    Untitled

    Abstract: No abstract text available
    Text: IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation per deck - Active (max) - 85mA/75mA - Standby (TTL Inputs) - 1 .0mA (max) - Standby (CMOS Inputs) - 1 ,0mA (max) • 4,194,304 word by 4 bit organization by 4 High


    OCR Scan     		PDF IBM01164B0 IBM01164D0 85mA/75mA 110ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P 200nA 100nA

    Untitled

    Abstract: No abstract text available
    Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features 1,048,576 word by 16 bit organization Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply Standard Power SP and Low Power (LP) 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116165 IBM0116165M IBM0116165B IBM0116165P 350ns 350ns) 28H4723 SA14-4225-03

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P SA14-4203-06