K102 P3
Abstract: K102 la 5531 DIN 50014 STANDARD F119 K102P K102P2 K102P3 DIN 50014 PS4030
Text: D TELEFUNKEN E LE CTRONI C • fl^üCHb GD077S1 3 IAL66 K 102 P TÏÏitLtiipyMKiNI electronic Creative Technologies -3 Construction: Emitter: Detector: Applications: Galvanically separated circuits, non-interacting switches
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flL-1000
rimb-25sC
K102 P3
K102
la 5531
DIN 50014 STANDARD
F119
K102P
K102P2
K102P3
DIN 50014
PS4030
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0252C
Abstract: DIN40040 RQK-10
Text: TELEFUNKEN ELECTRONIC Û1C ]> fiRSOORb QOObSlô 5 IAL66 T 1270 N Typenrelhe/Type range T1270N Elektrische Eigenschaften Electrical properties Höchszulässige Werte 3600 repetitive peak forward off-state and reverse voltages RMS on-state current average on-state current
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T1270
T1270N
lc-85
t-10ms
j-120
t-10m8
17/flgure
14/figure
16/ffgure
18/flgure
0252C
DIN40040
RQK-10
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BPW39
Abstract: CQX18
Text: 17E D TELEFUNKEN ELECTRONIC • ÖTEGO^b ODDflbME 3 CQX18 in iB J IF M K liM electronic _ T -H l-I I Cretbvi TfcchnoJogies GaAs Infrared Diode In plastic case Applications: IAL66 i: Radiation source in near infrared range Features: • Flat window
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IAL66
CQX18
000Ab45
BPW39
CQX18
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TFK 03 Diode
Abstract: TLHR0400 tfk 605 R0400 tfk 635
Text: TELEFUNKEN ELECTRONIC 17E D • Ô^EOCHb OOOöTMQ IAL66 Q TLH.0400 •¡mySRSMKIM electronic CrMtiv* Techno o9 4 S High Efficiency LEDs 0 10 mm in tinted diffused packages Technology Color Type High Efficiency Bed TLHR 040. GaAsP on GaP Yellow TLHY 040. GaAsP on GaP
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IAL66
000BT44
TFK 03 Diode
TLHR0400
tfk 605
R0400
tfk 635
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transistor bc 237c
Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers
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IAL66
15A3DIN
transistor bc 237c
transistor 206
BC 205 TRANSISTOR NPN
bc 206 transistor
bu205
BU206
AS 205 transistor
bf 204 115
TRANSISTOR BC 206
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BPW75
Abstract: IAL66 cm5 marking
Text: TELEFUNKEN ELECTRONIC 17E D • 0000450 T IAL66 BPW75 IMUIPtiiniK electronic CrMtfv«TechnoioQt#* 1 Silicon Photo PIN Diode A p p lication s: High speed photo detector Features: • Fast response times i Angie of half sensitivity ± 9 *= 65° • Sm all junction capacitance
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IAL66
BPW75
IAL66
cm5 marking
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DIODE S3V 43
Abstract: DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08
Text: H&D J> ITEL-EFUNKEN ELECTRONIC m ß^EOO^b PÜD7b7? IAL66 CNR 21 TTIUStFQflMKlIM electronic _ Creative Technologies Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor
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0806/IEC
0750/T1
0860/IEC
voltage933
DIODE S3V 43
DIODE S3V 03
DIN 50014
DIN 50014 STANDARD
electromedical
S10ms
CNR21
dioda
DIODE S3V 50
DIODE S3V 08
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DIODE S3V 94
Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
Text: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor
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D007b7?
IAL66
0806/IEC
0750/T1
0860/IEC
0007bfll
-200-mA
DIODE S3V 94
DIODE S3V 43
DIODE S3V 75
DIN 50014
S10ms
DIN 50014 STANDARD
S3V Diode 23
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transistor BC 236
Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:
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IAL66
15A3DIN
transistor BC 236
transistor bf 425
transistor bc 237c
TRANSISTOR 636
bc638 transistor
transistors BC 23
bc 640
transistor bc 238 b
D-636 transistor
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TRANSISTOR BC 208
Abstract: transistor Bu 208 BU208A TRANSISTOR BC 208 B
Text: TELEFUNKEN ELECTRONIC 17E T> m fl'teQtHb 000^455 IAL66 BU 208 A •¡nyHPtUJMKIMelectronic CfMtiv*Tfcchnotogw T - 33 -0} Silicon IMPN Power Transistor Applications; Horizontal deflection circuits in colour TV-receivers Features: • High reverse.voltage • Power dissipation 12.5 W
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IAL66
15A3DIN
TRANSISTOR BC 208
transistor Bu 208
BU208A
TRANSISTOR BC 208 B
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S219P
Abstract: ep 1387
Text: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and
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IAL66
S219P
ep 1387
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BF681
Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure
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T15/S54.
ft-11
569-GS
000s154
hal66
if-11
BF681
telefun* transistor pnp bf 681
marking code transistor fb
transistor 6B
transistor bc 470
telefunken C80
v 681 Telefunken
power electronic transistor
TRANSISTOR BC 950
sot-23 Marking DL
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Ko 368
Abstract: DIN40040 T388N TELEFUNKEN EL 156
Text: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00 Dbl 72 4 ■ AL 66 T Z 'Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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DDDbl75
OSOM70e0
Ko 368
DIN40040
T388N
TELEFUNKEN EL 156
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TFK diode
Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)
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S1000
2/1997-0888E
T0126
15A3DIN
TFK diode
diode tfk
TRANSISTOR BC 277
diode s .* tfk
tfk 045
TFK 220
transistor bf 244
76 TFK
244 tfk
diode 12A3
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TCST2001
Abstract: telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001
Text: TELEFUNKEN EL EC TR O N I C W fi^SüO^b Q007&3R b m k L G G J> TCST 1000 up to TCST 4001 tniQJltRLDKlCSiCÌI electronic _• ~7^ y / - 7 3 Creative Technologies Optoelectronic Interrupter without Aperture Construction: Emitter: GaAs-IR Emitting Diode
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0GQ7fl44
TCST2001
telefunken tcst
TCST1001
FLL100
EM 4001
TCST3001
TCST 2001
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transistor BU 426 A
Abstract: BU426 transistor bc 237c transistor the 6 MHz transistor BF 375
Text: 17E $ • sssDoib oooma & BU 426 - BU 426 A I TELEFUNKEN ELECTRONIC ■üHLÜtFMKIK] electronic CreativeTetfinok>Q*i T - 33-/3 Silicon NPN Power Transistors Applications: Switching mode power supply features: • In triple diffussion technique • Short switching time
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IAL66
15A3DIN
E--07
transistor BU 426 A
BU426
transistor bc 237c
transistor the 6 MHz
transistor BF 375
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Transistor BC 227
Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940
Text: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required
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DIN41
15A3DIN
Transistor BC 227
Electronic car ignition circuit
IRF 940 TRANSISTOR
Transistor S 637 T
s637t
TRANSISTOR G13
npn transistors 400V low power to92
A27 637
Marking Code A27 DIODE
irf 940
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Photo d12
Abstract: telefunken remote control TFMP2360
Text: fe 1 TELEFUNKEN ELECTRONIC 17 E d m a ^ a o o ^ b ooofit>aa =i TFMP 2360 electronic Creative fein/io 's q -v* PRELIMINARY' SPECIFICATION PHOTO MODULE FOR PCM REMOTE C O N TR O L SYSTEMS PAGE 1 7 -41-67 CARRIER FREQUENCY : 36 kHz FEATURES: * PHOTO DETECTOR AND PRE AMPLIFIER IN ONE PACKAGE
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00flb2ti
D--14
n20lHb
DDfib32
0D0fib33
IAL66
Photo d12
telefunken remote control
TFMP2360
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CF-100
Abstract: A08 transistor 50B4DIN41867 bss25 A08 marking F100T a08 transistor to-50 transistor bf 203
Text: TELEFUNKEN ELECTRONIC aie d • a^socnb 0005340 Creative Technologies \ T - J f - N-Channel-GaAs-M ESFET-Tetrode Depletion M ode Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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50B4DIN41867
569-GS
CF-100
A08 transistor
bss25
A08 marking
F100T
a08 transistor to-50
transistor bf 203
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BF963
Abstract: transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104
Text: TELEFUNKEN ELECTRONIC Û1C D • OOOSEMb 2 7^ -5 / BF 963 m f f l R M S I M electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for PM- and VHF TV-tuners up to 300 MHz
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IAL66
569-GS
BF963
transistor bf 963
ALG TRANSISTOR
ALG Transistor MARKING
2SC104
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00Dbl72 4 ■ AL66 T Z ' Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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00Dbl72
T388N
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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00CHb51
000Rb52
T0126
15A3DIN
diode B14A
B14A diode
TFK 03 Diode
TFK3070D
TFK 001
B14A
23 TFK 001
TFK u 269
TFK 03
TFK3070
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8012-TCZT
Abstract: IP551 TCZT8013
Text: TELEFUNKEN ELECTRONIC I ÛSeüG^b 0DQ7Ô7S T H A L 6G TCZT 8012 -TCZT 8013 iM electronic Creative Technologies Matchable Pairs - Emitter and Detector Emitter: Detector: Applications: ~ — r 'y / 7 / GaAs IR Emitting Diode Silicon NPN Epitaxial Planar Phototransistor
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gr012
8012-TCZT
IP551
TCZT8013
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U2351B
Abstract: U2351 2351B PWM IC 6-PIN DIP
Text: 44E D • 01200% 0010b43 4 ■ ALS6 U 2351 B • U 2351B-FP 'W PW M SPEED CONTROL FOR PERMANENT EXCITED DC MOTORS Technology: Bipolar TELEFUNKEN ELECTRONIC Features: ' T 5 Z .-1 3 - 1 S • Pulse width control up to 30 kHz clock frequency • Push-pull output stage
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0010b43
2351B-FP
0T20DSb
52-13-2S
2351B
2351B
IAL66
U2351B
U2351
PWM IC 6-PIN DIP
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