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    Untitled

    Abstract: No abstract text available
    Text: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 


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    PDF 5347B. 5382B

    Untitled

    Abstract: No abstract text available
    Text: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 


    Original
    PDF 5347B. 5382B

    K580

    Abstract: 5382B i5ij K8/selenium rectifier
    Text: 1N 5347B.1N 5382B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode


    Original
    PDF 5347B. 5382B 5382B K580 i5ij K8/selenium rectifier

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    PDF

    5347B

    Abstract: No abstract text available
    Text: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 


    Original
    PDF 5347B. 5382B 5347B

    NJM353D

    Abstract: NJM353 NJM353M
    Text: NJM353 2 Ü U E & A ‘J J - F E T A * u rn * < < 7 m > 7 ° m N JM 353«, A tl& tfS -F E T X -m i& Z titz X ^ T 's y 'tf 2 H 1 K A -? •Cl'ìto t&iU. {/ — U h, ^ ^ ¿11 ' ^ ^ L R ifF iI-S -fl, D / A 3 > / \ ' - i , - ^ > 7 ° ^ ^ —JU KSSS^OT-ftiitc felÈ A


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    PDF NJM353 NJM353Â NJM353D NJM353M NJM353 15VttT< 20LOG

    2SB673

    Abstract: 733b 2SB674 2SB675 2SD633 2SD634 2SD635 AC75
    Text: T o s h ib a “ -c / d is c r e t l o h to j- “St 2SB6731 2SB674 2SB675I 9097250 TOSHIBA D T | T D i:i?aSD □□□733t, D j| SILICON PNP EPIT AXIA L TYPE PCT PROCESS _ (DARLINGTON POWER)_ 5òC <D I S C R E T E / O P T O ) 0 7 33ö INDUSTRIAL APPLICATIONS


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    PDF 2SB6731 2SB674 2SB675I 2SD633, 2SD634 2SD635. 2SB673 2SB674 2SB675 733b 2SB675 2SD633 2SD635 AC75

    HJM2535L

    Abstract: NJM2235 NJM2535 NJM2535D NJM2535M NJM2535V LV-07
    Text: NJM2535 3 A * b 'f íS W NJM2535 tí, ÍS-§-, NJM2235 t t r i *if-§-<7>tä ‘J & ; L f f l 3 A * I it i* t ' f í S W T t , t ' > 3 >/N-^7'VK7) ^ , -ÍO TÍ í B # 4$ A A 'ñ J# ÉT *T o NTSC, P A L ^ Ä m 'f 'f t W V T R T 'f c f i S f l T * # £ 1% • íí


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    PDF NJM2535 nJM2535Â njm2235 NJM2235 43MHz) NJM2535D HJM2535L NJM2535M NJM2535V NJM2535 LV-07