ELPIDA DDR User
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
HY5RS573225AFP
500/600MHz
3XOOHG/RZWR9664
ELPIDA DDR User
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HY5RS573225B
Abstract: BA1 K11
Text: HY5RS573225BFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225BFP
8Mx32)
HY5RS573225BFP
550MHz
500MHz
HY5RS573225B
BA1 K11
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hynix gddr3
Abstract: 136ball HY5RS573225AFP HY5RS573225AFP2 HY5RS573225AFP-14 AP 4750 HY5RS573225A
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
HY5RS573225
hynix gddr3
136ball
HY5RS573225AFP
HY5RS573225AFP2
HY5RS573225AFP-14
AP 4750
HY5RS573225A
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HY5RS123235
Abstract: CLAMSHELL HYNIX and zq A2K1 136ball GDDR3 SDRAM 256Mb HY5RS123235FP nanya ba1g
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
HY5RS123235
CLAMSHELL
HYNIX and zq
A2K1
136ball
GDDR3 SDRAM 256Mb
HY5RS123235FP
nanya
ba1g
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HY5RS123235
Abstract: ELPIDA DDR User BA2-H10
Text: HY5RS123235F 512M 16Mx32 GDDR3 SDRAM HY5RS123235F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235F
16Mx32)
HY5RS123235F
HY5RS123235
ELPIDA DDR User
BA2-H10
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
240ohm
240ohms
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Untitled
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
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hy5rs123235b
Abstract: HY5RS123235BFP HY5RS123235
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
hy5rs123235b
HY5RS123235
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HY5RS573225AFP-14
Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
HY5RS573225AFP-14
11mmx14mm
HY5RS573225AFP-16
136ball
HY5RS573225AFP
HY5RS573225AFP-12
hynix gddr3
hy5rs573225afp-11
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136ball
Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
136ball
HY5RS573225AFP2
HY5RS573225AFP
samsung k9 derating
HY5RS573225AFP-11
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Untitled
Abstract: No abstract text available
Text: H5RS5223CFR 512Mbit 16Mx32 GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5RS5223CFR
512Mbit
16Mx32)
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Untitled
Abstract: No abstract text available
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
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H5RS5223CFR-11C
Abstract: H5RS5223CFR BA2-H10 ba2h3 H5RS5223CFR11C
Text: H5RS5223CFR 512Mbit 16Mx32 GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5RS5223CFR
512Mbit
16Mx32)
H5RS5223CFR
H5RS5223CFR-11C
BA2-H10
ba2h3
H5RS5223CFR11C
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Untitled
Abstract: No abstract text available
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235FP
16Mx32)
HY5RS123235FP
Page15)
Page47)
Table18
Page48)
Table19
Page50)
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HY5RS573225F
Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 1600-Mbps
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
240ohm
240ohms
HY5RS573225F
HY5RS573225F-12
HY5RS573225F-13
HY5RS573225F-14
HY5RS573225F-15
HY5RS573225F-16
1600-Mbps
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Untitled
Abstract: No abstract text available
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP Revision 1.1 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Apr. 2004
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HY5RS573225F
8Mx32)
HY5RS573225
240ohm
240ohms
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HY5RS573225F
Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 HY5RS573225F-18 HY5RS573225F-20 ELPIDA DDR User
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
HY5RS573225F
HY5RS573225F-12
HY5RS573225F-13
HY5RS573225F-14
HY5RS573225F-15
HY5RS573225F-16
HY5RS573225F-18
HY5RS573225F-20
ELPIDA DDR User
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HY5RS573225FP-2
Abstract: No abstract text available
Text: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
HY5RS573225
240ohm
240ohms
HY5RS573225FP-2
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HY5RS573225FP-2
Abstract: winbond HY5RS573225F DQ243 HY5RS573225FP POD18
Text: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
HY5RS573225
240ohm
240ohms
HY5RS573225FP-2
winbond
DQ243
HY5RS573225FP
POD18
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
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HY5PS1G1631CFP
Abstract: H5PS5162 h5ps5162ffr HY5PS1G1631C hy5rs123235b hy5ps121621cfp-25 HY5PS121621C-FP25 HY5PS1G1631 HY5RS123235BFP-14 hy5ps561621b
Text: Q2’ 2008 Short Form Catalog Part Number System Change Notice Back ground – Effective from September, 2007, a more concise part numbering system is utilized by Hynix with the intention of managing product line with more consistency Target Product – Devices developed after 2007-09-01 and their
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com/eng/00
256Mb
16Mx16
300MHz
HY5DU561622ETP-33
TSOPI170ball)
16Bank,
H5GQ1H24MJR-T1C
170ball)
HY5PS1G1631CFP
H5PS5162
h5ps5162ffr
HY5PS1G1631C
hy5rs123235b
hy5ps121621cfp-25
HY5PS121621C-FP25
HY5PS1G1631
HY5RS123235BFP-14
hy5ps561621b
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DDR2 x32
Abstract: gddr3 GDDR3 SDRAM 256Mb GDDR4 hynix hy POD-15 POD18 sdram 2g
Text: Last Updated: Dec. 2006 GRAPHICS MEMORY PART NUMBERING HY XX X XX XX X X X X X X - XX X TEMPERATURE HYNIX MEMORY Blank : Commercial 0℃~70℃ E : Extended (-25℃~85℃) I : Industrial (-40℃~85℃) PRODUCT FAMILY 5D 5P 5R 5F : : : : DDR SDRAM DDR2 SDRAM
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Refresh/32ms
Refresh/64ms
900MHz
800MHz
700MhZ
600MHz
550MHz
500MHz
DDR2 x32
gddr3
GDDR3 SDRAM 256Mb
GDDR4
hynix hy
POD-15
POD18
sdram 2g
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GDDR5 hynix
Abstract: No abstract text available
Text: Last Updated: Sep. 2012 GRAPHICS MEMORY PART NUMBERING H 5 T X XX X X X X X - XX X 1 2 3 4 56 7 8 9 10 11 12 13 14 HYNIX MEMORY OPERATING TEMPERATURE & POWER CONSUMPTION PRODUCT FAMILY 5 : DRAM C : Commercial Temp1 & Normal Power PRODUCT MODE T : DDR3 SDRAM
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8K/64ms
8K/32ms
16K/32ms
25GHz
75GHz
GDDR5 hynix
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