HY638256
Abstract: HY638256J-15
Text: HY638256 Series 32Kx8bit CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode
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HY638256
32Kx8bit
-100mA
100mA
28pin
300mil
HY638256J-15
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HY638256
Abstract: No abstract text available
Text: HY638256 •HYUNDAI 32Kx8bit CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode
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HY638256
32Kx8bit
HY638256
5/20/25ns
20/25ns
28pin
HY6382S6
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Untitled
Abstract: No abstract text available
Text: HY638250 Series 32Kx8bit CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that
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HY638250
32Kx8bit
HY638256
15/20/25ns
20/25ns
28pin
300mil
HY6382S6
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HY628400LLG
Abstract: HY628400LG-I HY628400LLP 8K*8 sram 52-PIN
Text: •HYU N DAI QUICK REFERENCE SRAM ORGANIZATION 64K bit 8Kx8 256K bit (32Kx8) 6 PART NUMBER SPEED(ns) FEATURES HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120
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HY6264AP
HY6264ALP
HY6264ALLP
HY6264AJ
HY6264ALJ
HY6264ALLJ
HY6264ALP-I
HY6264ALLP-I
HY6264ALJ-I
HY6264ALLJ-I
HY628400LLG
HY628400LG-I
HY628400LLP
8K*8 sram
52-PIN
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HY638256T1
Abstract: HY638256 AM524 HY638256J15
Text: HY638256 -HYUNDAI CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees
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OCR Scan
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PDF
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HY638256
15/17/20/25ns
100mA
100pA
T0-008
4b75DÃ
1DF01-22-MAY95
HY638256T1
AM524
HY638256J15
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HY638256
Abstract: No abstract text available
Text: HY638256 "H Y U N D A I CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design
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OCR Scan
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PDF
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HY638256
HY638256
15/17/20/25ns
100mA
1DF01
-22-MA
HY638256P
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HY628400LG-I
Abstract: HY62U16100LLR2-I HY62U256
Text: QUICK REFERENCE GUIDE •HYUNDAI SRAM QUICK REFERENCE Org. 64K bit 8Kx 8 256K bit (32Kx 8) PART NUMBER HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ HY6264ALP-I HY6264ALLP-I HY6264ALJ-I HY6264ALLJ-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ
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HY6264AP
HY6264ALP
HY6264ALLP
HY6264AJ
HY6264ALJ
HY6264ALLJ
HY6264ALP-I
HY6264ALLP-I
HY6264ALJ-I
HY6264ALLJ-I
HY628400LG-I
HY62U16100LLR2-I
HY62U256
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8s100
Abstract: HY62U16100LLR2-I HY62U256
Text: -HYUNDAI QUICK REFERENCE GUIDE SRAM QUICK REFERENCE MODE VOLT. ORGAN. PART NO. <V HY6264AP 70/85/100 70/85/100 L-PART 28PIN PDIP HY6264ALLP 70/85/100 LL-PART 28PIN PDIP HY6264AJ 70/85/100 HY6264ALJ HY6264ALLJ 70/85/100 70/85/100 L-PART LL-PART HY6264ALP-I
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HY6264AP
HY6264ALP
HY6264ALLP
HY6264AJ
HY6264ALJ
HY6264ALLJ
HY6264ALP-I
HY6264ALLP-I
HY6264ALJ-I
HY6264ALLJ-1
8s100
HY62U16100LLR2-I
HY62U256
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