Untitled
Abstract: No abstract text available
Text: HY57V281620HD L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HD(L)T is organized as 4banks of 2,097,152x16
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HY57V281620HD
16bits
728bit
152x16
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: HY57V281620HD L T 8Mx16-bit, 4KRef, 4Banks., 3.3V DESCRIPTION The Hynix HY57V281620HD(L)T is a 134,217,728bit CM OS Synchronous DRAM, ideally suited fo r the main m em ory applications which require large m em ory density and high bandwidth. HY57V 281620HD(L)T is organized as 4banks o f 2,097,152x16
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HY57V281620HD
8Mx16-bit,
728bit
HY57V
281620HD
152x16
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PC100
Abstract: 16MX64 16MX8 8MX16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V
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HY57V28420A
HY57V28820A
HY57V281620A
HY57V28420HC
HY57V28820HC
HY57V281620HC
HY57V28420HD
HY57V28820HD
PC100
16MX64
16MX8
8MX16
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