12H-0EH
Abstract: HYM71V65M1601
Text: 16Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M1601 PRELIMINARY Rev 0.1 The HYM71V65M1601 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag
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PDF
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16Mx64
PC/100
8Mx16
HYM71V65M1601
HYM71V65M1601
54-pin
144-pin
12H-0EH
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HY57V1291620
Abstract: No abstract text available
Text: 8Mx64 bit SDRAM SO DIMM X-Series based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M801 PRELIMINARY DESCRIPTION The HYM71V64M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag
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Original
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PDF
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8Mx64
8Mx16
HYM71V64M801
HYM71V64M801
54-pin
144-pin
HY57V1291620
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HY57V1291620
Abstract: hy57v1291620ltc
Text: HY57V1291620 4Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hyundai HY57V1291620 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1291620 is organized as 4banks of
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HY57V1291620
16bits
HY57V1291620
728bit
152x16.
400mil
54pin
hy57v1291620ltc
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hym71v65801
Abstract: HYM71V65801TX HY57V1291620
Text: 8Mx64 bit SDRAM Unbuffered DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V65801 PRELIMINARY DESCRIPTION The HYM71V65801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four
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Original
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PDF
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8Mx64
PC/100
8Mx16
HYM71V65801
HYM71V65801
54-pin
168-pin
HYM71V65801TX
HY57V1291620
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HYM71V65M1601
Abstract: No abstract text available
Text: 16Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M1601 PRELIMINARY DESCRIPTION The HYM71V65M1601 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig
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Original
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PDF
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16Mx64
PC/100
8Mx16
HYM71V65M1601
HYM71V65M1601
54-pin
144-pin
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HYM71V65M801LTX-10S
Abstract: HYM71V65M801 SO DIMM 144
Text: 8Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M801 PPRELIMINARY DESCRIPTION The HYM71V65M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag
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Original
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PDF
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8Mx64
PC/100
8Mx16
HYM71V65M801
HYM71V65M801
54-pin
144-pin
HYM71V65M801LTX-10S
SO DIMM 144
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HYM71V65M1201
Abstract: HY57V651620BTC-8
Text: 12Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 8Mx16 & 4Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V65M1201 DESCRIPTION The HYM71V65M1201 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit and four 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a
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Original
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PDF
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12Mx64
PC/100
8Mx16
4Mx16
HYM71V65M1201
HYM71V65M1201
8Mx16
54-pin
144-pin
HY57V651620BTC-8
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Untitled
Abstract: No abstract text available
Text: 8Mx64 bit SDRAM SO DIMM X-Series based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M801 PRELIMINARY Rev 0.3 The HYM71V64M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag
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Original
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PDF
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8Mx64
8Mx16
HYM71V64M801
HYM71V64M801
54-pin
144-pin
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Untitled
Abstract: No abstract text available
Text: HY57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1291620 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1291620 is organized as 4banks of
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Original
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PDF
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HY57V1291620
16Bit
HY57V1291620
728bit
152x16.
400mil
54pin
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hy57v1291620
Abstract: No abstract text available
Text: HY57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1291620 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1291620 is organized as 4banks of
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Original
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PDF
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HY57V1291620
16Bit
HY57V1291620
728bit
152x16.
400mil
54pin
|
HY57V1291620
Abstract: No abstract text available
Text: » « Y U N P f t l - • HY57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V1291620 is a 134, 217 ,728bit C M O S Synchronous D RAM , ideally suited for the m ain m em ory a pplications w hich require large m em ory d en sity and high bandw idth. H Y 57V 1291620 is organized as 4banks of
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OCR Scan
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PDF
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HY57V1291620
16Bit
57V1291620
728bit
152x16.
HY57V1291620
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