4MX16
Abstract: No abstract text available
Text: HY51V64160,HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160
HY51V65160
4Mx16,
16-bit
4Mx16
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V64160, HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow
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HY51V64160,
HY51V65160
4Mx16,
16-bit
0-A12)
4Mx16
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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256KX4)
HY531000AJ
HY531000ALJ
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
HY512260SLJC
HY512264JC
HY512264LJC
HY5116400BT
HY5117400CJ
50-PIN
HY5117804BT
TSOP-II 44
26-PIN
HY5118160BJ
hy51v65804
HY5117400BJ
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I « HY51V64160.HY51 V65160 4Ux16, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160
V65160
4Ux16,
16-bit
A0-A12)
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HY5118164B
Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B
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16Mbit
HY51V17404A
HY51V17404B
300mil)
400mil)
HY5118164B
hy5118160b
HY5118160
HY51V65400TC
HY5117804B
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY51V64160,HY51 V65160 4M x 16-bit CMOS DRAM with Fast Page Mode PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION This fam ily is a 64M bit d ynam ic RAM organized 4,194,304 x16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed
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HY51V64160
V65160
16-bit
HY51V64160TC
HY51V64160LTC
HY51V64160SLTC
HY51V65160TC
HY51V65160LTC
HY51V65160SLTC
x16-bit
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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