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    HY514260

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY514260 Series 2 5 6 K X 1 6 - b lt C M O S DRAM w tth 2 C A S PRELIMINARY DESCRIPTION The HY514260 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514260 16-bit 400mil 40pln 40/44pin 1AC11-00-APR93 HY514260JC

    HY514260

    Abstract: WRC-15 a08andoe
    Text: -HYUNDAI SEMICONDUCTOR H Y514260 Series 256Kx 16-blt CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514260 256Kx 16-bft 16-bit 400mil 40pin 40/44pin 1AC11-00-APR93 WRC-15 a08andoe

    hy514260

    Abstract: No abstract text available
    Text: "HYUNDAI HY514260 Seríes SEMICONDUCTOR 256K X 16-blt CM O S DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514260 16-blt 16-bit 400mil 40pin 40/44pin 1AC11-00-APR93 4L7506B