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Catalog Datasheet	MFG & Type	PDF	Document Tags
HY5118164B Abstract: HY5118164BJC HY5116164B Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process	Original	PDF	HY5118164B HY5116164B 1Mx16, 16-bit 1Mx16 HY5118164BJC HY5116164B
A8303 Abstract: HY5118164BSLJC HY5118164B 5118164B marking da Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells	OCR Scan	PDF	HY5118164B HY51161646 HY5118164BJC HY5118164BSLJC HY5118164BTC HY5118164BSLTC HY5116164BJC HY5116164BSLJC HY5116164BTC HY5116164BSLTC A8303 5118164B marking da
Untitled Abstract: No abstract text available Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	16-bit HY5116164B 16-bit. HY5116164B 1ADS7-10-MAY95 HY5116164BJC HY5116164BSLJC HY5116164BTC
HY5116164B Abstract: HY5116164BJC wx19 Text: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5116164B 16-bit 16-bit. 1AOS7-10-MAY95 HY5116164BJC HY5116164BSLJC wx19
TIME03 Abstract: No abstract text available Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process	OCR Scan	PDF	HY5118164B HY5116164B 1Mx16, 16-bit DG0-DQ15) TIME03
AUO-PL321.60 Abstract: HY51V18164B HY514264 HY514260 Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP	OCR Scan	PDF	HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260
PST34 Abstract: No abstract text available Text: H YU N D AI H Y 5 1 1 6 1 6 4 B S e r ie s 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	16-bit HY5116164B 16-bit. 1ADS7-10-MAY95 HY5116164 HY5116164BTC PST34
HY51V18164 Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC	OCR Scan	PDF	256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ