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    HVM100 Search Results

    HVM100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HVM100 Hitachi Semiconductor Silicon Epitaxial Planar Diode for High Voltage Switching Original PDF
    HVM10000 Sino-American Silicon Products 550mA Iout, 10kV Vrrm General Purpose Silicon Rectifier Scan PDF

    HVM100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 Features • • • • High capacitance ratio. (n = 16.0 min) High figure of merit. (Q = 200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.


    Original
    HVM100 ADE-208-470 HVM100 450pF, 200pF PDF

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HVM100 Silicon Epitaxial Planar Diode for AM tuner ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltage. MPAK package is suitable for high density surface mounting and high speed assembly.


    Original
    HVM100 ADE-208-470A Hitachi DSA001653 PDF

    HVM100

    Abstract: SC-59A vr15a Hitachi DSA00302
    Text: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 September 1996 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.


    Original
    HVM100 ADE-208-470 SC-59A HVM100 SC-59A vr15a Hitachi DSA00302 PDF

    501c1

    Abstract: No abstract text available
    Text: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C


    Original
    IEC950 EN60950, UL1950 UL1459 501c1 PDF

    hvigbt

    Abstract: hvigbt diode 150nH
    Text: 1.2 VCC=850V, VGE=±15V RG=3.3Ω, Tj=125°C, LS=150nH Inductive load Integrated over range of 10% 1 SWITCHING ENERGY [J/P] 0.8 Eon 0.6 0.4 Eoff 0.2 Erec 400 800 1200 1600 COLLECTOR / EMITTER CURRENT [A] Half-bridge switching energy characteristics typical


    Original
    150nH HVM-1005-A hvigbt hvigbt diode 150nH PDF

    CM800DZ-34H

    Abstract: mitsubishi CM800DZ-34H
    Text: MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V


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    CM800DZ-34H HVM-1005-A VCC1150V, di/dt1800A/ CM800DZ-34H mitsubishi CM800DZ-34H PDF

    Untitled

    Abstract: No abstract text available
    Text: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C


    Original
    IEC950 EN60950, UL1950 UL1459 250Vrms NL2731) PDF

    Untitled

    Abstract: No abstract text available
    Text: The Talema Group nt magnetics nuvotem • Talema Group Overview and Capabilities • Toroidal Transformers • Power Chokes and Inductors • SMPS Transformers and Inductors • Current Sense Inductors and Transformers • Communications and Data Line Magnetics


    Original
    PDF

    IEC950

    Abstract: IEC-950 A11018
    Text: HVM Series - ISDN S Interface Modules Features • Fully certified to IEC950, supplementary level • Proven compatability with all common interface IC's • Excellent compliance with ITU-T I.430 pulse waveform requirements • Guaranteed reliability, parameters 100% auto-tested


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    IEC950, IEC950 HVM-100C1 HVM-130C1 250VRMS NL2731) IEC-950 A11018 PDF

    ALCATEL 2840

    Abstract: WK 6052 CUJ-XXX-16B Centillium Communications TNETE100A
    Text: nt magnetics nuvotem Magnetic Components for Communications and Data Line Technology Sales & Marketing, Design and Manufacturing Facilities http://www.talema-nuvotem.com Eastern Europe & Czech Republic NT MAGNETICS s.r.o. Chebská 27 322 00 Plzeñ Tel: Int. + 420 377 - 338 351


    Original
    PDF

    hitachi mosfet power amplifier audio application

    Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
    Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners


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    AmVC132 HVC133 HVC134 HVM131S HVM131SR HVM132 HVM132WK hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI PDF

    hvm15 varicap

    Abstract: hvc321b varicap diode tv tuner LT 5246 HUV131 diode lt 316 varicap diode HITACHI tuner C25 diode CVR 275 20
    Text: Tune your Circuits Tuner Applications Varicap Diode Samples in this Kit: • • • • • • HVU 202B HVC 202B HVU 300B HVC 300B HVU 306B HVC 306B • • • • • • HVU 363B HVC 363B HVU 12 HVC 316 HNC 317B HVM 15 Hitachi’s range of Varicap and PIN Diodes


    Original
    PDF

    HVIGBT

    Abstract: induction heating circuits circuit diagram of 1 phase bridge inverter HVIGBT from Mitsubishi electric CM1200HC-66H 3300V 1001 transistor
    Text: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V


    Original
    CM1200HC-66H HVM-1001-A VCC2200V, di/dt3600A/ HVIGBT induction heating circuits circuit diagram of 1 phase bridge inverter HVIGBT from Mitsubishi electric CM1200HC-66H 3300V 1001 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: IC - SO Interface Module Selection Guide Talema manufactures a wide range of signal transformers for all S O ISDN applications. Space saving modules, available in through hole and surface mount packages, offer a cost effective alternative to individual transformers


    Original
    ISM-100C1-470) PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-470 Z Rev 0 September 1996 Features • High capacitance ratio, (n = 16.0 min) • High figure o f merit. (Q = 200 min) • To be usable at low voltagee. • M PAK package is suitable for high density surface m ounting and high speed assembly.


    OCR Scan
    HVM100 ADE-208-470 SC-59A PDF

    Untitled

    Abstract: No abstract text available
    Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


    OCR Scan
    HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008, PDF

    L42n

    Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
    Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:


    OCR Scan
    DD00212 HM3500, HE12000 ECL10K/KH/100K 148-Pin MIL-M-38510/600 MIL-STD-883C L42n HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e PDF

    DIODE marking Sl

    Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
    Text: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7


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    HRW0202A HRW0202B HRW0203A HRW0302A HRW05 HRW0503A HRW0702A HRW0703A HSM83 HSM88AS DIODE marking Sl s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode PDF

    HVC358B

    Abstract: HVC367
    Text: DIODE llg^-IS JüS ÎP lÜ E ?^:# “i ^ — K Application Package code MPAK Tuning BS/CS Tuner URP UFP VCO UHF Tuning URP URP UFP URP VHF Tuning TV Tuner UFP AFC MPAK LLD URP UFP URP VCO UFP MPAK SÉRIES Variable capacitance diodes for electronic tuning


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    HVM11 HVM15 HVU12 HVU314 HVU316 HVC317B HVU356 HVU202A HVC202A HVU200A HVC358B HVC367 PDF

    1SS106

    Abstract: 1SS119 1SS172 1SS108
    Text: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©


    OCR Scan
    1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS106 1SS119 1SS172 1SS108 PDF