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Honeywell Sensing and Control CSHV800A-001 CSHV800A-001 CURRENT SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CSHV800A-001	Box	15		1	1 $61.23 10 $61.23 100 $49.68 1000 $49.68 10000 $49.68	Buy Now
Mouser Electronics	CSHV800A-001		50			1 $59.3 10 $56.01 100 $40.93 1000 $40.93 10000 $40.93	Buy Now
Newark	CSHV800A-001	Bulk	25		1	1 $46.84 10 $46.84 100 $42.59 1000 $42.59 10000 $42.59	Buy Now
RS	CSHV800A-001	Bulk		7 Weeks	25	1 - 10 - 100 $64.72 1000 $64.72 10000 $64.72	Get Quote
TTI	CSHV800A-001	Bulk	25		5	1 - 10 $56.58 100 $33.17 1000 $32.3 10000 $32.3	Buy Now

Master Electronics	CSHV800A-001					1 $25.34 10 $22.62 100 $18.12 1000 $16.45 10000 $16.45	Buy Now
TE Connectivity YHV800-2P-90-50M-B HVP800-2PHI XE,90,50SQMM,KEY B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	YHV800-2P-90-50M-B	Box	3		1	1 $165.22 10 $132.004 100 $132.004 1000 $132.004 10000 $132.004	Buy Now
Avnet Americas	YHV800-2P-90-50M-B	Bulk		6 Weeks	1	1 $123.55545 10 $122.49489 100 $89.4232 1000 $89.4232 10000 $89.4232	Buy Now
Mouser Electronics	YHV800-2P-90-50M-B		76			1 $131.99 10 $127.07 100 $108.85 1000 $108.85 10000 $108.85	Buy Now
TTI	YHV800-2P-90-50M-B	Each	14		1	1 $75 10 $71 100 $66 1000 $66 10000 $66	Buy Now
Interstate Connecting Components	YHV800-2P-90-50M-B					1 $167.6236 10 $157.6162 100 $118.2121 1000 $118.2121 10000 $118.2121	Buy Now

Avnet Abacus	YHV800-2P-90-50M-B			9 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	YHV800-2P-90-50M-B					1 $154.97 10 $136.72 100 $123.5 1000 $123.5 10000 $123.5	Buy Now
	YHV800-2P-90-50M-B					1 $150.86 10 $144.17 100 $120.07 1000 $120.07 10000 $120.07	Buy Now
Sager	YHV800-2P-90-50M-B				1	1 $155.3 10 $146.67 100 $146.67 1000 $146.67 10000 $146.67	Buy Now
Schaffner FN3359HV-800-99 LINE FILTER 800A CHASSIS MOUNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FN3359HV-800-99	Tray	1		1	1 $2419.51 10 $2419.51 100 $2419.51 1000 $2419.51 10000 $2419.51	Buy Now
Mouser Electronics	FN3359HV-800-99					1 $2419.5 10 $2419.5 100 $2419.5 1000 $2419.5 10000 $2419.5	Get Quote
Bristol Electronics	FN3359HV-800-99		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	FN3359HV-800-99				1	1 $2568.86 10 $2568.86 100 $2568.86 1000 $2568.86 10000 $2568.86	Get Quote
Sager	FN3359HV-800-99				1	1 $2419.51 10 $2419.51 100 $2419.51 1000 $2419.51 10000 $2419.51	Buy Now
STMicroelectronics STHV800L IC ULTRASOUND PULSER 56TFLGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STHV800L	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	STHV800L	Tray		25 Weeks	260	1 - 10 - 100 - 1000 $38.556 10000 $37.485	Buy Now
Mouser Electronics	STHV800L					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	STHV800L	Bulk	3,575		1	1 $52.76 10 $52.76 100 $52.76 1000 $52.76 10000 $52.76	Buy Now
STMicroelectronics	STHV800L				1	1 $49.97 10 $46.95 100 $42.1 1000 $39.38 10000 $39.38	Buy Now

Avnet Silica	STHV800L			17 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STHV800L		780	26 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STHV800L		3,120			1 $63.6203 10 $42.4136 100 $42.4136 1000 $42.4136 10000 $42.4136	Buy Now
Eaton Bussmann BK-S505H-V-800-R FUSE CERM 800MA 600VAC 400VDC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BK-S505H-V-800-R	Bulk			100	1 - 10 - 100 $5.5778 1000 $5.5778 10000 $5.5778	Buy Now
Newark	BK-S505H-V-800-R	Bulk			100	1 - 10 - 100 $5.38 1000 $4.54 10000 $4.54	Buy Now
TME	BK-S505H-V-800-R				100	1 - 10 - 100 $5.9 1000 $5.9 10000 $5.9	Get Quote
Sager	BK-S505H-V-800-R				100	1 - 10 - 100 $4.44 1000 $4.2 10000 $4.2	Buy Now

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HV800 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
500W TRANSISTOR Abstract: hvvi Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	PDF	HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi
HVV1012-550 Abstract: 4884 12W 01 TRANSISTOR hvvi Text: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed	Original	PDF	HVV1012-550 HVV1012-550 429-HVVi EG-01-PO18X2 4884 12W 01 TRANSISTOR hvvi
500W TRANSISTOR Abstract: HVV1011-500L 500W RF Transistor 1030 MHz Text: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor	Original	PDF	HVV1011-500L on/18us HVV1011-500L on/18 HV800 MIL-STD-883, 429-HVVi EG-01-PO17X7 500W TRANSISTOR 500W RF Transistor 1030 MHz
HVV0912-450 Abstract: diode gp 429 TACAN Text: HVV0912-450 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor	Original	PDF	HVV0912-450 HVV0912-450 429-HVVi EG-01-PO35X1 diode gp 429 TACAN
500W TRANSISTOR Abstract: hvvi HVV1012-550 Text: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	PDF	HVV1012-550 HVV1012-550 EG-01-PO18X1 500W TRANSISTOR hvvi
transistor SMD 12W MOSFET Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the	Original	PDF	HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w
HVV1214-250L Abstract: hvvi Text: HVV1214-250L Product Overview L-Band High Power Pulsed Transistor 2000µs Pulse Width, 10% Duty Cycle For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1214-250L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	PDF	HVV1214-250L HVV1214-250L 1200MHz 1400Mhz EG-01-PO16X1 hvvi
HVV1011-600 Abstract: hvvi 1090MHZ Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor	Original	PDF	HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ
Untitled Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES High Power Gain Excellent Ruggedness	Original	PDF	HVV0912-450 HV800 MIL-STD-883,
hvv1011 Abstract: HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors Text: Product Selection Guide Avionics RF Power Transistors For IFF, TCAS, Transponder/Interrogator Applications Pulse Width = 50us, Duty Cycle = 2% PART NUMBER HVV1011-035 HVV1011-300 HVV1011-600 FREQUENCY (MHz) 1030-1090 1030-1090 1030-1090 VDD (V) 50 50 50	Original	PDF	HVV1011-035 HVV1011-300 HVV1011-600 SM200 HV400 HV800 hvv1011 HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors
J152-ND Abstract: No abstract text available Text: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at [email protected] Contents: - PCB Component Placement Diagram	Original	PDF	HVV1011-600 HVV1011-600-EK 712-1388-1-ND 478-2646-1-ND 399-1222-2-ND 399-1236-2-ND 478-3134-1-ND PCE3484TR-ND HV800 FXT000116 J152-ND
Untitled Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at 1030 MHz & 1090 MHz using a 2.4ms pulse burst 32 s on/18 s off x 48 repeated every 24ms.	Original	PDF	HVV1011-500L on/18 HV800A MIL-STD-883,
AIRBORNE DME Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with	Original	PDF	HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12

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HV800 Search Results

HV800 Price and Stock

Honeywell Sensing and Control CSHV800A-001

TE Connectivity YHV800-2P-90-50M-B

Schaffner FN3359HV-800-99

STMicroelectronics STHV800L

Eaton Bussmann BK-S505H-V-800-R

HV800 Datasheets Context Search

500W TRANSISTOR

HVV1012-550

500W TRANSISTOR

HVV0912-450

500W TRANSISTOR

transistor SMD 12W MOSFET

HVV1214-250L

HVV1011-600

Untitled

hvv1011

J152-ND

Untitled

AIRBORNE DME