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    Abstract: No abstract text available
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199B 400-mil 32-pin HM621400HCJP-10 HM621400HCLJP-10 HM621400CJP10

    HM621400HC

    Abstract: HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199B 400-mil 32-pin D-85622 D-85619 HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316

    HM621400HCLJP-12

    Abstract: HM621400HC HM621400HCJP-10 HM621400HCJP-12 HM621400HCLJP-10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 HM621400HCLJP-12 HM621400HC HM621400HCJP-10 HM621400HCJP-12 HM621400HCLJP-10