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    Untitled

    Abstract: No abstract text available
    Text: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.


    OCR Scan     		PDF HM100490 65536-Words 10/12ns 500mW

    Untitled

    Abstract: No abstract text available
    Text: HM100490-15- Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory HM100490-15 is ECL 100k compatible, 65536-words % 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.


    OCR Scan     		PDF HM100490-15--------------65536-words HM100490-15 65536-words HM100490-15 536-words 320mW HM100490F-15

    Untitled

    Abstract: No abstract text available
    Text: HM100490 Series — Preliminary 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed lor high speed sys­ tems such as scratch pads and control/buffer storage.


    OCR Scan     		PDF HM100490 65536-Words 10/12ns 500mW HM100490-12

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    Untitled

    Abstract: No abstract text available
    Text: H M 1 0 4 9 0 -1 5 Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory H M 10490-15 is E C L 10k com patible, 65536-w ords x 1-bit, read/write random access m em ory developed fo r high speed sys­ tems such as m ain mem ories fo r super computers.


    OCR Scan     		PDF 65536-words 65536-w 536-w HM100490-15

    HM6116L

    Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
    Text: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0


    OCR Scan     		PDF CG-20 CG-22A CG-24 CG-28 HM6267CG HM6287CG HM6787CG HM100490CG HM100422CG, HM100415CG HM6116L HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    HM6788P-25

    Abstract: 6788P s12045 28-pin SOJ SRAM
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo­ ries is high speed but small capacity, instead, MOS


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    27c301

    Abstract: HM6788P-25 HM6788
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.


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