HL8314G Search Results

HL8314G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HL8314G		Hitachi Semiconductor	Laser Diode: 30mW Power: 850nm Wave Length: 60mA Current		Scan	PDF

HL8314G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HL8314G Laser Diode Description H L 8314G is a high-pow er 0.8 G aA IA s laser d io d e with d o u b le hetero ju n ctio n stru ctu re. It is su itab le as a light source in optical disc m em o rie s and various o th e r types o f optical equip m en t. High pow er o u tp u t is obtained th ro u g h nonsy m m etrical coating technology for chip m irror	OCR Scan	PDF	HL8314G 8314G
HL8314E Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001 Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8314E/G 0G12a71 HL8314E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8314E XP 215 hitachi HE130 hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
XP 215 hitachi Abstract: No abstract text available Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8314E/G HL8314E/G 44Tb205 0012D74 T-41-05 XP 215 hitachi

Catalog Datasheet

MFG & Type

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Document Tags

Untitled

Abstract: No abstract text available
Text: HL8314G Laser Diode Description H L 8314G is a high-pow er 0.8 G aA IA s laser d io d e with d o u b le hetero ju n ctio n stru ctu re. It is su itab le as a light source in optical disc m em o rie s and various o th e r types o f optical equip m en t. High pow er o u tp u t is obtained th ro u g h nonsy m m etrical coating technology for chip m irror

OCR Scan

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HL8314G 8314G

HL8314E

Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

OCR Scan

PDF

HL8314E/G 0G12a71 HL8314E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8314E XP 215 hitachi HE130 hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001

XP 215 hitachi

Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

OCR Scan

PDF

HL8314E/G HL8314E/G 44Tb205 0012D74 T-41-05 XP 215 hitachi