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    HL8311E Search Results

    HL8311E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL8311E Hitachi Semiconductor Laser Diode: 15mW Power: 850nm Wave Length: 60mA Current Scan PDF

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    HE8815VG

    Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
    Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.


    OCR Scan     		PDF HL8311E/G HL8311E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M

    Untitled

    Abstract: No abstract text available
    Text: HL8311E Laser D iode Description HL831 IE is a 0.8 /^m G aAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc memories and various other types o f optical equip­ ment. A screw-on type package facilitates the adjust­


    OCR Scan     		PDF HL8311E HL831

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.


    OCR Scan     		PDF 001E0b3 HL8311E/G HL8311E/G T-41-05