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Infineon Technologies AG CHL8316CRT IC REG CTRLR DDR 2OUT 48QFN
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Infineon Technologies AG CHL8318-04CRT IC REG BUCK 56VQFN
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HL831 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
HL8311E	Hitachi Semiconductor	Laser Diode: 15mW Power: 850nm Wave Length: 60mA Current	Scan	PDF
HL8311G	Hitachi Semiconductor	Laser Diode: 15mW Power: 850nm Wave Length: 60mA Current	Scan	PDF
HL8312E	Hitachi Semiconductor	Laser Diode: 20mW Power: 850nm Wave Length: 60mA Current	Scan	PDF
HL8312G	Hitachi Semiconductor	Laser Diode: 20mW Power: 850nm Wave Length: 60mA Current	Scan	PDF
HL8314E	Hitachi Semiconductor	Laser Diode: 30mW Power: 850nm Wave Length: 60mA Current	Scan	PDF
HL8314G	Hitachi Semiconductor	Laser Diode: 30mW Power: 850nm Wave Length: 60mA Current	Scan	PDF
HL8318E	Hitachi Semiconductor	Laser Diode: 40mW Power: 850nm Wave Length: 40mA Current	Scan	PDF
HL8318G	Hitachi Semiconductor	Laser Diode: 40mW Power: 850nm Wave Length: 40mA Current	Scan	PDF
HL8319E	Hitachi Semiconductor	Laser Diode: 40mW Power: 850nm Wave Length: 40mA Current	Scan	PDF
HL8319G	Hitachi Semiconductor	Laser Diode: 40mW Power: 850nm Wave Length: 40mA Current	Scan	PDF

HL831 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HI TA CHI/ O PTOE LECTRONI CS SHE D • 44ibaGS 001207^ bñT « H I T 4 H L 8 3 1 8 E /G GaAIAsLD (-os Description The HL8318E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are	OCR Scan	PDF	44ibaGS HL8318E/G ib205 HL8318E/G T-41-05
HE1301 Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001 Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are	OCR Scan	PDF	HL8319E/G 001EGÃ HL8319E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE1301 HE8807SG HE8813VG HL8312E HL8319E HL8319G Hitachi Scans-001
Untitled Abstract: No abstract text available Text: HL8312E-Laser Diode Description H L 8 3 1 2 E is a h ig h -p o w e r 0 .8 iin G a A IA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le as a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip	OCR Scan	PDF	HL8312E---------------Laser HL8312E
HE8815VG Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.	OCR Scan	PDF	HL8311E/G HL8311E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Untitled Abstract: No abstract text available Text: H IT A C H I/ OPTOELECTRONICS 54E J> m MM^bSGS 0012075 HL8315E T34 H H I T M G aAIAs LD Description The HL8315E is a high-power 0.8 \|jm band GaAlAs laser diode with a double heterojunction structure. It is suitable as a light source for optical disk memories and various other types of optical equipment.	OCR Scan	PDF	HL8315E HL8315E T-41-05 G15D7Ã
Untitled Abstract: No abstract text available Text: HL8311E Laser D iode Description HL831 IE is a 0.8 /^m G aAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc memories and various other types o f optical equip ment. A screw-on type package facilitates the adjust	OCR Scan	PDF	HL8311E HL831
HE8813VG Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807 Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8312E/G HL8312E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8813VG HE8403 HE8807SG HE8811 HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Untitled Abstract: No abstract text available Text: HL8314G Laser Diode Description H L 8314G is a high-pow er 0.8 G aA IA s laser d io d e with d o u b le hetero ju n ctio n stru ctu re. It is su itab le as a light source in optical disc m em o rie s and various o th e r types o f optical equip m en t. High pow er o u tp u t is obtained th ro u g h nonsy m m etrical coating technology for chip m irror	OCR Scan	PDF	HL8314G 8314G
E12M Abstract: SIU800 8315E Text: HL8315E Laser Diode Description H L 8315E is a high-pow er 0.8 /um G aA IA s laser diode with d o u b le heterojunction structure. It is suitab le as a light source in optical disc m em o ries and various o th er types o f optical equip m ent. A screw -on type package facilitates th e a d ju st	OCR Scan	PDF	HL8315E 8315E E12M SIU800
J835 Abstract: HL8319G Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L8319E/G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are	OCR Scan	PDF	L8319E/G HL8319E/G -----T-41-05 HL8319E/G 40rnW J835 HL8319G
Untitled Abstract: No abstract text available Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^ 2 0 5 G0120b7 «Him -4 1 - o s The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8312E/G G0120b7 HL8312E/G 44Tfei5D5 001E070
HL8314E Abstract: No abstract text available Text: HL8314E Laser Diode D escription H L 8 3 1 4 E is a h ig h -p o w e r 0 .8 yum G a A lA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le as a lig h t s o u rc e in o p tical disc m e m o r ie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip	OCR Scan	PDF	HL8314E HL8314E
Untitled Abstract: No abstract text available Text: HL8311G-Laser Diode Description H L 8 3 1 1 G is a 0 .8 /nm G a A lA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le a s a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip	OCR Scan	PDF	HL8311G-------------Laser
HL8314E Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001 Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8314E/G 0G12a71 HL8314E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8314E XP 215 hitachi HE130 hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001

HL8318G Abstract: No abstract text available Text: HL8318G-Laser Diode Description HL8318G is a high-power 0.8 /um GaAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc m em ories and various other types of optical equip m ent. Single positive power supply is available for LD	OCR Scan	PDF	HL8318G---------------Laser HL8318G HL8318G
Untitled Abstract: No abstract text available Text: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.	OCR Scan	PDF	001E0b3 HL8311E/G HL8311E/G T-41-05
XP 215 hitachi Abstract: No abstract text available Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8314E/G HL8314E/G 44Tb205 0012D74 T-41-05 XP 215 hitachi
Untitled Abstract: No abstract text available Text: HL8312G Laser Diode Description H L 8 3 1 2 G is a high-pow er 0.8 iin G aA IA s laser d io d e with d o u b le h etero ju n ctio n structure. It is su itab le as a light source in optical disc m em o rie s and v arious o th e r types o f optical equip	OCR Scan	PDF	HL8312G HL8312G
Untitled Abstract: No abstract text available Text: HL8318E Laser Diode Description H L 8318E is a high-pow er 0.8 /xm G aA IA s laser d io d e with d o u b le h etero ju n ctio n stru ctu re. It is suitab le as a light source in optical disc m em o rie s an d v arious o th er types o f optical eq u ip m en t.	OCR Scan	PDF	HL8318E 8318E
HL7801 Abstract: HL7806 Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).	OCR Scan	PDF
HL7801 Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301 Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838	OCR Scan	PDF	HL671IG HL671I HL7801 HL7802 HL7806 HL7831 HL7832 HL7836 HL7838 HL83H HE8807CL HL7801E HL1324MF HL83M HE8812 hitachi he1301
HL7806 Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836 Text: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.	OCR Scan	PDF
free transistor equivalent book 2sc Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com	OCR Scan	PDF
PF0310A Abstract: PF0144 Hitachi PF0030 HE8807CL Hitachi Industry Laser Diodes HL7806 Text: Reliability 1 Reliability 1.1 Reliability Data for CODEC LSIs T his sectio n d isc u sse s the re lia b ility d ata for Hitachi communication devices. Although current data is u sed , the rap id pace o f sem ico n d u cto r device development means new data may be added	OCR Scan	PDF

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HL831 Datasheets (10)

HL831 Datasheets Context Search

Untitled

HE1301

Untitled

HE8815VG

Untitled

Untitled

HE8813VG

Untitled

E12M

J835

Untitled

HL8314E

Untitled

HL8314E

HL8318G

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XP 215 hitachi

Untitled

Untitled

HL7801

HL7801

HL7806

free transistor equivalent book 2sc

PF0310A