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    Abstract: No abstract text available
    Text: BVDSS = 650 V RDS on typ = 2.3 Ω HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD5N65S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU5N65S 1.Gate 2. Drain 3. Source


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    PDF HFD5N65S HFU5N65S HFD5N65S O-252 O-251 hfu5n65s