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    Abstract: hfd5n50
    Text: BVDSS = 500 V RDS on typ = 1.2 Ω HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD5N50S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU5N50S 1.Gate 2. Drain 3. Source


    Original     		PDF HFD5N50S HFU5N50S HFD5N50S HFD5N50S/HFU5N50S O-252 O-251 hfu5n50s hfd5n50